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In-Situ UHV Tem Investigations of the Initial Oxidation Stage of Copper Thin Films

Published online by Cambridge University Press:  10 February 2011

J. C. Yang ,
M. Yeadon ,
B. Kolasa  and
J. M. Gibson
J. C. Yang
Affiliation:
Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
M. Yeadon
Affiliation:
Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
B. Kolasa
Affiliation:
Dept. of Physics, University of California, Santa Barbara, CA
J. M. Gibson
Affiliation:
Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
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Abstract

The nucleation and growth of Cu2O due to oxidation of Cu(001) films were monitored at various temperatures and oxygen partial pressures. For all examined temperatures and pressures, Cu2O islands were observed to form epitaxially with respect to the copper film. The nucleation of these oxide islands was homogeneous –no clear evidence was observed for either steps or dislocations being preferential nucleation sites. Based on this data, we have developed a semiquantitative model of the initial oxidation stage where the dominant mechanism for transport, nucleation and growth of oxide islands is oxygen diffusion on the Cu surface. We are presently comparing our experimental data with nucleation rate theory, where the predictions qualitatively describe our observations, but not quantitatively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 481: Symposium P – Science and Technology of Semiconductor Surface Preparation , 1997 , 557
Copyright
Copyright © Materials Research Society 1998

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References

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