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In-situ Plasma Diagnosis of Chemical Species in Microwave Plasma-assisted Chemical Vapor Deposition for the Growth of Carbon Nanotubes Using CH4/H2/NH3 Gases

Published online by Cambridge University Press:  14 March 2011

Y.S. Woo ,
I.T. Han ,
N.S. Lee ,
J.E. Jung ,
D.Y. Jeon  and
J.M. Kim
Y.S. Woo
Affiliation:
Dept. of Materials Sci. and Eng., Korea Advanced Institute of Science and Technology, Taejon, Korea
I.T. Han
Affiliation:
Display Lab., Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
N.S. Lee
Affiliation:
Display Lab., Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
J.E. Jung
Affiliation:
Display Lab., Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
D.Y. Jeon
Affiliation:
Dept. of Materials Sci. and Eng., Korea Advanced Institute of Science and Technology, Taejon, Korea
J.M. Kim
Affiliation:
Display Lab., Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea, jongkim@sait.samsung.co.kr
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Abstract

Synthesis of multi-wall carbon nanotubes (MWNTs) was attempted by microwave plasma enhanced chemical vapor deposition using CH4/H2/NH3 gases on Ni/Cr-coated glass at low temperature. The synthesis was investigated by optical emission spectroscopy and quadrupole mass spectroscopy. It was observed that MWNTs could be grown within a very restrictive range of gas compositions. An addition of a small amount of NH3 resulted in a decrease of C2H2, which can be used to estimate the amount of carbon sources in plasma for the growth of MWNTs, and an increase of CN and Hα radicals acting as etching species of carbon phases. These results show that carbon nanotubes can be grown only under an appropriate condition that the growing process surpasses the etching process. The optimum C2H2 /Hα ratio in a gas mixture was found to be between 1 and 3 for the MWNT growth at low temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , R7.6.1
Copyright
Copyright © Materials Research Society 2000

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References

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