Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-26T19:48:19.076Z Has data issue: false hasContentIssue false
  • English
  • Français

In‐Situ Patterning and Critical Current Density Measurements in Laser Deposited High‐Tc Superconducting Thin Films

Published online by Cambridge University Press:  28 February 2011

R. K. Singh ,
C. B. Lee ,
P. Tiwari  and
J. Narayan
R. K. Singh
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh NC 27695‐7916
C. B. Lee
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh NC 27695‐7916
P. Tiwari
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh NC 27695‐7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh NC 27695‐7916
Get access

Abstract

We have performed transport critical current density, Jc, measurements on epitaxial superconducting thin films which were in‐situ patterned during the laser deposition process. Shadow masks of various dimensions were placed close to the substrate to generate different patterns. Epitaxial films of YBa2Cu3O7 on (100) SrTiO3, (100) YSZ, and (100) LaA1O3 substrates were fabricated at low processing temperatures (500‐650°Q by the biased laser deposition technique in an oxygen ambient of 200 mtorr. Excellent quality superconducting thin films were formed on patterned areas. The critical temperature of the films was found to be in the range of 88 to 90 K, and the best critical current density values (at 77K, and zero magnetic field) greater than 6.5 x106 Amps/cm2 were obtained for silver doped YBa2Cu3O7 films on (100)LaAlO3 substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 887
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Narayan, J., Biunno, N., Singh, R., Holland, O. W. and Auciello, O., Appl. Phys. Lett., 51, 1845 (1987)Google Scholar
2 Singh, R. K., Narayan, J., Singh, A. K., and Krishnaswamy, J., Appl. Phys. Lett. 54, 2271 (1989)..Google Scholar
3 Shih, I. and Qiu, C. X., Appl. Phys. Lett., 52, 1523 (1988)Google Scholar
4 Gurvitch, M. and Fiory, A. T., Appl. Physlxtt., 51,1027 (1987)Google Scholar
5 Koch, R. H., Umbach, C. P., Clark, G. J., Chaudhari, P., and Laibowitz, R. B., Appl. Phys. Lett. 51, 200 (1987)Google Scholar
6 Singh, R.K., Narayan, J., Singh, A.K., and Lee, C.B., J. Appl. Phys., March 15,1990 Google Scholar
7 Singh, R.K., and Narayan, J., SPIE conference meeting, Santa Clara 1989 Google Scholar