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In-Situ Multiprocessing of Ultrathin Silicon Nitride Capacitors for Advanced Dram Cells

Published online by Cambridge University Press:  22 February 2011

Randhir P.S. Thakur ,
Rick Hawthorne ,
Viju K. Mathews ,
Pierre C. Fazan ,
Chris J. Werkhoven ,
Ernst Granneman  and
Rudy Wilhelm
Pierre C. Fazan
Affiliation:
Micron Semiconductor, Inc., 2805 E. Columbia Road, Boise, ID 83706
Rudy Wilhelm
Affiliation:
ASM International, Rembrandtlann 2A, 3723 BJ Bilthoven, The Netherlands
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Abstract

Ultrathin silicon nitride capacitors were fabricated using in-situ multiprocessing technology. In this paper we present comparative studies of capacitor formation using standard furnace processing, rapid thermal processing (RTP), and cluster tool processing of ONO dielectric films. We show that, due to better interface control using cluster tool processing, higher capacitance can be obtained for a fixed leakage level for the same thickness of dielectric film when compared to furnace and rapid thermal processing. We discuss the structural and electrical properties of these films and show that, due to an oxide-free interface, the improved film quality results in lower leakage current density and higher reliability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 195
Copyright
Copyright © Materials Research Society 1994

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References

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