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In-Situ Characterization of the Surface State Density by Photoluminescence During Electrochemical Treatments of Silicon Surfaces

Published online by Cambridge University Press:  10 February 2011

T. Dittrich ,
V. Y. Timoshenko  and
J. Rappich
T. Dittrich
Affiliation:
Technische Universität München, Physik Department E16, D-85747 Garching, Germany
V. Y. Timoshenko
Affiliation:
Physics Department, Moscow State University, 119899 Moscow, Russia
J. Rappich
Affiliation:
Hahn-Meitner-Institut, Abt. Photovoltaik, Rudower Chaussee 5, D-12489 Berlin, Germany
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Abstract

The photoluminescence (PL) of c-Si is probed stroboscopically with single pulses of a N2 laser during electrochemical treatments (hydrogenation and anodic oxidation). The PL intensity of indirect semiconductors such as Si is controlled by the non-radiative surface and bulk recombination. By this reason the density of surface states can be estimated for unknown surfaces by using a calibrated standard. The surface state density of a hydrogenated Si surface increases by exchanging the electrolyte by gaseous N2 or water.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 451: Symposium P – Electrochemical Synthesis and Modification , 1996 , 203
Copyright
Copyright © Materials Research Society 1997

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References

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