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In-Process Evaluation of Kinetic Energy of Sputter Depositing Atoms Using Multijunction Thermal Converters

Published online by Cambridge University Press:  21 February 2011

Quanmin Su
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, 20742-2115, USA
D. X. Huang
Affiliation:
Ballantine Labs. Inc., Cedar Knolls, NJ 07927,
Manfred Wuttig
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, 20742-2115, USA
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Abstract

The kinetic energy of Au atoms was evaluated during sputter deposition of Au films using a multijunction thermal convenor (MJTC). The elastic strain energy of the deposited film was simultaneously measured by a high resolution vibrating membrane technique. For the evaluation the flux of Au atoms was treated as an energy flux irradiating a membrane connected to an infinite heat sink. The steady state temperature rise of this membrane under irradiation was used to convert to the kinetic energy of the atomic flux of known deposition rate. The kinetic energy of the sputter depositing Au flux was determined to be in the range of 5 to 18 eV. Only a fraction of it, of the order of 10−4, is converted into mechanical energy manifesting itself as film stress. The results demonstrate the possibility of using MJTCs as kinetic energy monitors during thin film deposition.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

1. Windischmann, H., Critical Reviews in Solid State and Material Sciences 17, 547 (1992)Google Scholar
2. Windischmann, H., J. Appl. Phys. 62, 1800 (1987)Google Scholar
3. Müller, K.-H, J. Appl. Phys. 62, 1798 (1987)Google Scholar
4. Hoffman, D. W. and Gaettner, M. R., J. Vac. Sci. Technol. 17, 425 (1980)Google Scholar
5. Edgar, J. H., J. Mater. Sci. Res. 7, 235 (1992), M. Yoder, “Applications of Semiconducting Diamond and Related Materials”, SPIE Meeting, Jan. (1994)Google Scholar
6. Thompson, M. W., Phil. Mag. 18, 377 (1968)Google Scholar
7. Meyer, K., Schuller, I. K. and Falco, C. M., J. Appl. Phys. 52, 5803 (1981)Google Scholar
8. Wehner, G. K., Phys. Rev. 114, 1270 (1959)Google Scholar
9. Paul, W. and Wessel, G., Z. Physik 124, 691 (1948)Google Scholar
10. Stuart, R. V., Brower, K. and Mayer, W., Rev. Sci. Instrum. 34, 425, (1963)Google Scholar
11. Window, B., J. Vac. Sci. Technol. A11, 1522 (1993)Google Scholar
12. Kinard, J. R., Hwang, D. X. and Novotny, D. B., CPEM’94 Digest p. 407 (1994)Google Scholar
13. Kinard, J. R., Hwang, D. X. and Novotny, D. B., CPEM’90 Digest, p. 62 (1990)Google Scholar
14. Völklein, F., Thin Solid Films 188, 27 (1990)Google Scholar