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In-line Characterization of Thin Polysilicon Films by Variable Angle Spectroscopic Ellipsometry

Published online by Cambridge University Press:  17 March 2011

S. Paprotta ,
K. S. Röver ,
R. Ferretti ,
U. Höhne ,
J. D. Kähler  and
J. Haase
S. Paprotta
Affiliation:
Institut für Halbleitertechnologie und Werkstoffe der Elektrotechnik, Universität HannoverAppelstr. 11a, 30167 Hannover, Germany
K. S. Röver
Affiliation:
Institut für Halbleitertechnologie und Werkstoffe der Elektrotechnik, Universität HannoverAppelstr. 11a, 30167 Hannover, Germany
R. Ferretti
Affiliation:
Institut für Halbleitertechnologie und Werkstoffe der Elektrotechnik, Universität HannoverAppelstr. 11a, 30167 Hannover, Germany
U. Höhne
Affiliation:
Centrotherm Elektrische Anlagen GmbH+Co. Johannes-Schmid-Str. 3, 89143 Blaubeuren, Germany
J. D. Kähler
Affiliation:
Centrotherm Elektrische Anlagen GmbH+Co. Johannes-Schmid-Str. 3, 89143 Blaubeuren, Germany
J. Haase
Affiliation:
Centrotherm Elektrische Anlagen GmbH+Co. Johannes-Schmid-Str. 3, 89143 Blaubeuren, Germany
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Abstract

Up to now an in-line method for parameter determination of deposited thin polysilicon films is not available. In this paper a method for monitoring the polysilicon deposition process in device manufacturing by variable angle spectroscopic ellipsometry (VASE) is demonstrated. Therefore several polysilicon films are deposited on thermally oxidized [100] silicon wafers. These samples are characterized by VASE in the optical range of 450 - 850 nm. Parameters are determined by simulation using a multilayer model consisting of air, interface layer (surface roughness), polysilicon, SiO2 and silicon substrate. Different optical models representing the properties of polysilicon are tested. The free parameters are the oxide thickness, the composition and the thickness of the interface layer (air, polysilicon) as well as the thickness and the complex refractive index of the polysilicon layer. Results of the spectroscopic analysis are verified by AFM and SEM measurements. It can be shown that parameters of the deposited polysilicon films, which often could only be determined by complex and destructive off-line analysis methods are also accessible by non-destructive in-line VASE measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A8.8
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Kamins, T., Polycrystaline silicon for integrated circuits and displays (Kluwer Academic Publischers,1998) pp.245–315, p. 209Google Scholar
2. Faraone, L., Harbeke, G., J. Electrochem. Soc., 133, 1410–1413 (1986)Google Scholar
3. Azzam, R. M. A. and Bashara, N. M., Ellipsometry and polarized light, (Elsevier, 1999) pp. 153–415 Google Scholar
4. Petrrik, P., Fried, M., Lohner, T., Berger, R., Biro, L. P., Schneider, C., Gyulai, J., Ryssel, H. Thin Solid Films, 313–314, 259–263 (1998)Google Scholar
5. Vatal, O., Dumas, P., Chollet, F., Salvan, F., Andre, E., Jpn. J. Appl. Phy., 32, 5671–5674 (1993)Google Scholar
6. Tompkins, H. G., A users's guide to ellipsometry, (Academic Press., 1993) pp. 246–251 Google Scholar
7. Tompkins, H. G. and McGahan, W. A., Spectroscopic ellipsometry and reflectometry: a user's guide, (Wiley, 1999) pp. 26–33 Google Scholar
8. Palik, E. D., Handbook of optical constants of solids, (Academic Press., 1985)Google Scholar
9. Sze, S. M., VLSI Technology, (McGraw Hill,1988) pp. 204–207 Google Scholar