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Initial Stages of Molecular Beam Epitaxical Growth of Highly Strained Inxga1-XAs on Gaas (100)

Published online by Cambridge University Press:  25 February 2011

S. Guha ,
A. Madhukar ,
R. Kapre  and
K. C. Rajkumar
S. Guha
Affiliation:
Department of Materials Science
A. Madhukar
Affiliation:
Department of Materials Science Department of Physics
R. Kapre
Affiliation:
Department of Electrical EngineeringPhotonic Materials and Devices LaboratoryUniversity of Southern California, Los Angeles, CA 90089-0241.
K. C. Rajkumar
Affiliation:
Department of Materials Science
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Abstract

We have studied the initial stages of highly mismatched InxGa1-x As growth on GaAs (100) by transmission electron microscopy (TEM). We find direct evidence of (i) deformation in the substrate below each island to depths of about 150 A and (ii) strain relief in the islands at their lateral edges. Growth morphology as a function of growth temperature is studied and it is found that the tendency for islanding for x as high as 0.5 can be supressed to a large extent by a reduction in the growth temperature. We also present results of correlation between TEM determined different growth morphologies (brought about by different growth temperatures ) and the electrical characteristics of AlAs/InxGa1-xAs resonant tunneling diode structures grown on GaAs (100).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 519
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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