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Initial Stages in the Growth of Oxide Thin Films by CVD

Published online by Cambridge University Press:  21 February 2011

Lisa A. Tietz ,
Scott R. Summerfelt ,
Gerald R. English  and
C. Barry Carter
Lisa A. Tietz
Affiliation:
Cornell University, Department of Materials Science and Engineering, Ithaca, NY 14853
Scott R. Summerfelt
Affiliation:
Cornell University, Department of Materials Science and Engineering, Ithaca, NY 14853
Gerald R. English
Affiliation:
Cornell University, Department of Materials Science and Engineering, Ithaca, NY 14853
C. Barry Carter
Affiliation:
Cornell University, Department of Materials Science and Engineering, Ithaca, NY 14853
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Abstract

A technique has been developed for studying the early stages of heteroepitactic nucleation and growth of oxide thin films by TEM using direct deposition onto electron-transparent ceramic substrates. Observations of α-Fe2O3 island growth on four orientations of α-Al2O3 – (0001), {1102}, {1010}, and {1120} – are reported. Moir6 fringes and selected-area diffraction are used to show heteroepitactic growth. Island morphology is compared to known growth habits of hematite crystals. Preferential nucleation of islands at low-energy sites (e.g. surface steps) is also demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 113
Copyright
Copyright © Materials Research Society 1990

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