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Initial Stage of Oxidation on Si(111)-7×7 Surface Investigated by Scanning Tunneling Microscope

Published online by Cambridge University Press:  15 February 2011

Jeong Sook Ha ,
Kang-Ho Park ,
Seong-Ju Park  and
El-Hang Lee
Jeong Sook Ha
Affiliation:
Research Department, Electronics and Telecommunications Research Institute, Taejon, 305-600, Korea
Kang-Ho Park
Affiliation:
Research Department, Electronics and Telecommunications Research Institute, Taejon, 305-600, Korea
Seong-Ju Park
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju, 506-303, Korea
El-Hang Lee
Affiliation:
Research Department, Electronics and Telecommunications Research Institute, Taejon, 305-600, Korea
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Abstract

The initial oxidation of Si(111)-7×7 surface has been investigated by taking the STM images of samples dosed with oxygen at room temperature and high temperatures between 500°C and 750 °C. In particular, different site selectivities between two oxygen-induced features, bright and dark sites, were observed and explained in terms of the difference in potential energy curves. In addition to such a strong site selectivity under low oxygen partial pressure (l×10-9 torr), heavy surface etching by oxygen was observed at higher O2 partial pressures and temperatures resulting in the high density of monolayer-deep etch marks on terraces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 404: Symposium J – In Situ Electron and Tunneling Microscopy of Dynamic Processes , 1995 , 205
Copyright
Copyright © Materials Research Society 1996

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