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Inhibition of Metal Induced Crystallization in the System Ag/ZnO/a-Si:H

Published online by Cambridge University Press:  10 February 2011

F. Edelman ,
R. Brener ,
C. Cytermann ,
R. Weil ,
C. Beneking  and
W. Beyer
F. Edelman
Affiliation:
Technion-Israel Institute of Technology, Solid State Institute, Haifa 32000, Israel, edelmann@tx.technion.ac.il
R. Brener
Affiliation:
Technion-Israel Institute of Technology, Solid State Institute, Haifa 32000, Israel, edelmann@tx.technion.ac.il
C. Cytermann
Affiliation:
Technion-Israel Institute of Technology, Solid State Institute, Haifa 32000, Israel, edelmann@tx.technion.ac.il
R. Weil
Affiliation:
Technion-Israel Institute of Technology, Solid State Institute, Haifa 32000, Israel, edelmann@tx.technion.ac.il
C. Beneking
Affiliation:
Institut für Schicht- und lonentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
W. Beyer
Affiliation:
Institut für Schicht- und lonentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
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Abstract

A systematic investigation has been made on the barrier properties of ZnO layer between ndoped a-Si:H and Ag metallization films in the structures (001)Si/SiO2/Ag/ZnO/a-Si:H:P and (001)Si/SiO2/a-Si:H:P/ZnO/Ag. Plasma assisted CVD deposition was used to produce a-Si:H (2500Å thick) highly P-doped films over thermally oxidized Si-wafers at 190 and 270°C. Transparent conductive ZnO:AI layers, 1000Å and lμm thickness, and Ag films (1000Å thick) were deposited by sputtering. The polycrystalline ZnO layers were textured along the <0001> axis in the as-deposited state. The structures were annealed in vacuum in the temperature range from 300 to 700°C for 1/4 to 16h. X-ray diffraction and transmission electron microscopy studies demonstrated the a-Si:H:P stability against crystallization under ZnO buffer protection up to 700°C (when free a-Si crystallizes itself). The (111) peak position of the Ag reflection was used to show that while the Ag was always strained, the strain was partially relaxed when in contact with the 0. 1μm ZnO film, it developed additional strain when in contact with the 1μm ZnO film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 13
Copyright
Copyright © Materials Research Society 1996

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