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Infrared-Photovoltaic Responses of Ion-Beam Synthesized β-FeSi2/n-Si Heterojunctions

Published online by Cambridge University Press:  10 February 2011

Yoshihito Maeda ,
Kenji Umezawa ,
Kiyoshi Miyake  and
Kenya Ohashi
Yoshihito Maeda
Affiliation:
Department of Materials Sciences, Osaka Prefecture University, Sakai, Osaka, 599-8531Japan, ymaeda@ms.cias.osakafu-u.ac.jp Department of Electronic Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, The United Kingdom
Kenji Umezawa
Affiliation:
Department of Electronic Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, The United Kingdom
Kiyoshi Miyake
Affiliation:
Department of Environmental Science and Human Engineering, Saitama University, Urawa, Saitama 338-8570Japan, kmiyake@ d-kiki.ees.saitama-u.ac.jp
Kenya Ohashi
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd. Hitachi, Ibaraki 319-1292Japan
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Abstract

Photoresponses of photovoltaic cells using ion-beam synthesized (IBS) polycrystalline p+-β-FeSi2/n-Si heterojunctions were examined in an infrared (IR) wavelength region. At room temperature, an evident photoresponse due to an internal photoemission from trap levels in β-FeSi2 with the threshold energy Φ=0.62 eV was observed at 0.6-0.87 eV. The pronounced increase of a photoresponse corresponding mostly to an interband transition in β-FeSi2 was observed at 0.87-1.1 eV. The maximum dominated by a surface recombination process appeared around ∼1.2 eV. The surface recombination rate of ∼104 cm/s was estimated. The quantum efficiency was ∼60 % in the 0.8-1.0 µm wavelength region and ∼14 % around the band-gap of βFeSi2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 315
Copyright
Copyright © Materials Research Society 2000

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