Hostname: page-component-848d4c4894-tn8tq Total loading time: 0 Render date: 2024-06-17T17:46:53.941Z Has data issue: false hasContentIssue false
  • English
  • Français

Infrared Reflection Spectroscopy Of As-Anodized And Passivated 6H And 4H Porous Silicon Carbide

Published online by Cambridge University Press:  10 February 2011

Jonathan E. Spanier  and
Irving P. Herman
Jonathan E. Spanier
Affiliation:
Department of Applied Physics and Columbia Radiation Laboratory, Columbia University, New York, NY 10027
Irving P. Herman
Affiliation:
Department of Applied Physics and Columbia Radiation Laboratory, Columbia University, New York, NY 10027
Get access

Abstract

We present a study of the infrared reflectance of porous silicon carbide (PSC) formed by the electrochemical dissolution of silicon carbide substrates of both 6H and 4H polytypes. The formation of porous silicon carbide from a 4H-SiC substrate is reported for the first time, as is the reflectance from n-PSC, both as-anodized and passivated. The passivation of PSC has been accomplished using a short thermal oxidation. Fourier transform infrared (FTIR) reflectance spectroscopy is employed ex situ after different stages of the thermal oxidation process. The characteristics of the reststrahlen band normally observed in bulk SiC are altered by anodization; further changes in the reflectance spectra occur following oxidation for different short periods of time. An effective medium theory model which includes air, SiC and SiO2 as component materials is shown to characterize the observed changes in the reflectance spectra after different stages of PSC oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 317
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Tsybeskov, L., Duttagupta, S. P., and Fauchet, P. M., Solid State Comm. 95, 429 (1995).Google Scholar
2. Spanier, J. E., Cargill, G. S. III, Herman, I. P., Kim, S., Goldstein, D., Kurtz, A. D., and Weiss, B. Z., in Advances in Microcrystalline and Nanocrystalline Semiconductors-1996, edited by Collins, R. W., Fauchet, P. M., Shimizu, I., Vial, J.-C., Shimada, T., Alivisatos, A. P., (Mat. Res. Soc. Symp. Proc. 452, Pittsburgh, PA, 1997) p. 491.Google Scholar
3. MacMillan, M. F., Devaty, R. P., Choyke, W. J., Spanier, J. E., Goldstein, D., and Kurtz, A. D., J. Appl. Phys. 80, 2412 (1996).Google Scholar
4. Shor, J. S., Grimberg, I., Weiss, B. Z., and Kurtz, A. D., Appl. Phys. Lett. 62, 2836 (1993)Google Scholar
5. Smith, R. L. and Collins, S. D., J. Appl. Phys. 71, Rl (1992).Google Scholar
6. Zheng, Z., Tressler, R. E., and Spear, K. E., J. Electrochem. Soc. 137, 854 (1990).Google Scholar
7. Genzel, L. and Martin, T. P., Surface Science 34, 33 (1973).Google Scholar
8. Weaver, J. H., Alexander, R. W., Teng, L., Mann, R. A., and Bell, R. J., Phys. Stat. Sol. (A), 20, 321 (1973).Google Scholar
9. Philipp, H. R., in Handbook of Optical Constants of Solids, edited by Palik, E. D. (Academic, New York, 1985) p. 762.Google Scholar
10. Looyenga, H., Physica 31, 401 (1965).Google Scholar