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Infrared Photoconductivity and Photoluminescence from InAs/Ga1–xInxSb Strained-Layer Superlattices

Published online by Cambridge University Press:  28 February 2011

R. H. Miles ,
D. H. Chow  and
T. C. Mcgill
R. H. Miles
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265
D. H. Chow
Affiliation:
T. J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
T. C. Mcgill
Affiliation:
T. J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
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Abstract

We have examined spectrally resolved photoconductivity and photoluminescence from InAs/Ga1–xInxSb strained-layer superlattices, which have been proposed as infrared detectors in the 8-14 μm region. Our measurements indicate that the energy gaps of the strained–layer superlattices are substantially smaller than those of InAs/GaSb superlattices with similar layer thicknesses, in agreement with previous theoretical predictions. Measurements on InAs/Ga1–xInxSb superlattices with x=0 and 0.25 and layer thicknesses of 25 – 45 A indicate superlattice band gaps of 3 – 15 μm, in excellent agreement with gaps calculated by a two band k · p model. Our results demonstrate that far-infrared energy gaps are compatible with the thin layers necessary for strong optical absorption in type-IT superlattices, and suggest that InAs/Ga1–xInxSb superlattices are promising candidates for far-infrared detection.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 303
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Smith, D. L. and Mailhiot, C., J. Appi. Phys. 62, 2545 (1987).Google Scholar
2. Mailhiot, C. and Smith, D. L., J. Vac. Sci. Technol. A 7, 445 (1989).10.1116/1.576201Google Scholar
3. Gualtieri, G. J., Schwartz, G. P., Nuzzo, R. G., Malik, R. J., and Walker, J. F., J. Appl. Phys. 61, 5337 (1987).10.1063/1.338270Google Scholar
4. Sai-Halasz, G. A., Chang, L. L., Welter, J.-M., Chang, C.-A., and Esaki, L., Solid State Commun. 27, 935 (1978).10.1016/0038-1098(78)91010-4Google Scholar
5. Chang, L. L., Kawai, N. J., Sai-Halasz, G. A., Ludeke, R., and Esaki, L., Appl. Phys. Lett. 35, 939 (1979).Google Scholar
6. Arch, D. K., Wicks, G., Tonaue, T., Staudeninann, J.-L., J. Appl. Phys. 58, 3933 (1985).Google Scholar
7. Chow, D. H., Miles, R. H., Soderström, J. R., and McGill, T. C., J. Vac. Sci. Technol. B, to be published.Google Scholar
8. Chow, D. H., Miles, R. H., Söderstrém, J. R., and McGill, T. C., Appl. Phys. Lett. 56, 1418 (1990).10.1063/1.102486Google Scholar
9. Baukus, J. P., Hunter, A. T., Marsh, O. J., Jones, C. E., Wu, G. Y., Hetzler, S. R., McGill, T. C., and Faurie, J.-P., J. Vac. Sci. Technol. A 4, 2110 (1986).Google Scholar
10. Voisin, P., Bastard, G., Silva, C. E. T. Goncalves da, Voos, M., Chang, L. L., and Esaki, L., Solid Stale Con-mnun. 39, 79 (1981).10.1016/0038-1098(81)91051-6Google Scholar
11. Petroff, P. M., Cibert, J., Gossard, A. C., Dolan, G. J., and Tu, C. W., J. Vac. Sci. Technol. B 5, 1204 (1987).10.1116/1.583712Google Scholar
12. Miles, R. H., Chow, D. H., Schulman, J. N., and McGill, T. C., submitted to Appl. Phys. Lett.Google Scholar