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Influence of Unsymmetrical Electrode structure on a-Si Photodiode Characteristics

Published online by Cambridge University Press:  28 February 2011

M. Hayama ,
K. Kobayashi ,
H. Miki  and
Y. Onishi
M. Hayama
Affiliation:
Materials and Electronic Devices Lab., Mitsubishi Electric Corp., 1-1, Tsukaguchi-honmachi 8-chome, Amagasaki, Hyogo 661, JAPAN
K. Kobayashi
Affiliation:
Materials and Electronic Devices Lab., Mitsubishi Electric Corp., 1-1, Tsukaguchi-honmachi 8-chome, Amagasaki, Hyogo 661, JAPAN
H. Miki
Affiliation:
Materials and Electronic Devices Lab., Mitsubishi Electric Corp., 1-1, Tsukaguchi-honmachi 8-chome, Amagasaki, Hyogo 661, JAPAN
Y. Onishi
Affiliation:
Materials and Electronic Devices Lab., Mitsubishi Electric Corp., 1-1, Tsukaguchi-honmachi 8-chome, Amagasaki, Hyogo 661, JAPAN
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Abstract

Amorphous silicon(a-Si) stripe p-i junction photodiode array for contact-type image sensor of a facsimile has been developed and investigated especially with regard to its unsymmetrical electrode structure. This sensor consists of a p-i a-Si stripe layer, Cr separate electrodes, and an ITO common electrode. As a result, it is found that the photosensitive region of a-Si stripe type photodiode exists not only in a-Si sub-region having both upper and lower electrodes but also in a-Si sub-regions having upper or lower one-sided electrode. It is considered that photocarrier collecting mechanisms in the a-Si sub-regions are different and result to the different photodiode characteristics.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 689
Copyright
Copyright © Materials Research Society 1986

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References

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