Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-26T20:07:13.444Z Has data issue: false hasContentIssue false
  • English
  • Français

The Influence of Thermal-Mechanical Effectson Resistance Changes During and After Electromigration Experiments

Published online by Cambridge University Press:  15 February 2011

A. SCORZONI ,
I. DE MUNARI ,
H. STULENS  and
V. D'HAEGER
A. SCORZONI
Affiliation:
CNR - Istituto LAMEL, via P. Gobetti 101, 40129 Bologna, Italy
I. DE MUNARI
Affiliation:
Dip. Ingegneria dell'Informazione, Università di Parma, v.le delle Scienze, 43100 Parma, Italy
H. STULENS
Affiliation:
Material Physics Division, Institute for Material Research (IMO), Limburg University Centre, B-3590 Diepenbeek, Belgium.
V. D'HAEGER
Affiliation:
Material Physics Division, Institute for Material Research (IMO), Limburg University Centre, B-3590 Diepenbeek, Belgium.
Get access

Abstract

This paper is focused on the non-linear resistance behaviours often detected by means of high resolution resistometric methods both at the very beginning of an electromigration (EM) test, and after the high stressing current inducing EM is switched off. It is shown that temperature steps, always present at the beginning or after EM, are the triggering events for different, often reversible, physical phenomena contributing to resistance changes. Precipitation-dissolution of alloyed elements is perhaps the most important one, while other mechanisms, like the combined effect of hydrostatic stress relaxation and void volume change, should cancel out. These effects, however, don't exclude a possible simultaneous effect on the resistance of accumulation/relaxation of EM damage. Experimental results are collected by means of different, complementary techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 513
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Lloyd, J. R., Koch, R. H., Proc. 25th IEEE Int. Rel. Phys. Symp., 161 (1987)Google Scholar
2 Baldini, G. L., Scorzoni, A., IEEE Trans. on Electron Devices, 38 (3), 469 (1991).Google Scholar
3 D'Haeger, V., Stulens, H., De Ceuninck, W., De Schepper, L., Gallopyn, G., De Pauw, P., Stals, L. M., ESREF '93, Bordeaux France, 141 (1993).Google Scholar
4 Scorzoni, A., De Munari, I., Stulens, H., Mat. Res. Symp. Proc., 337, 515 (1994).Google Scholar
5 Scorzoni, A., Cardinali, G. C., Baldini, G. L., Soncini, G., Microelectron. Reliab., 30, 123 (1990).Google Scholar
6 Baldini, G. L., Scorzoni, A., Tamarri, F., Microelectron. Reliab., 33, 1841 (1993).Google Scholar
7 Niehof, J., Flinn, P. A., Maloney, T. J., ESREF '92, Schwäbisch Gmiind (Germany), 359 (1992).Google Scholar
8 Möckl, U. E., Lloyd, J. R. and Arzt, E., Mat. Res. Symp. Proc, 309, 301 (1993).Google Scholar
9 Niehof, J., de Graaf, H. C., Verwey, J. F., ESREF '93, Bordeaux (France), 135 (1993).Google Scholar
10 Hinode, K., Furusawa, T., Homma, Y., Proc. 30th IEEE Int. Rel. Phys. Symp., 205 (1992).Google Scholar
11 Sanchez, J. E. Jr., Pham, V., Mat. Res. Symp. Proc., 338, 459 (1994).Google Scholar
12 Lawson, A. W., Prog. in Metal Phys., 6, 1 (1956).Google Scholar
13 Korhonen, M. A., BØrgesen, P., Tu, K. N., Che-Yu, Li, J. Appl. Phys., 73 (8), 3790 (1993).Google Scholar
14 Korhonen, M. A., BØrgesen, P., Brown, D. D., Che-Yu, Li, J. Appl. Phys., 74 (8), 4995 (1993).Google Scholar
15 Van Gurp, G. J., J. Appl. Phys., 44 (5), 2040 (1973).Google Scholar
16 De Munari, I., Scorzoni, A., Tamarri, F., Govoni, D., Corticelli, F. and Fantini, F., IEEE Trans. on Electron Devices, 41 (12), 2276 (1994).Google Scholar
17 Rose, J. H., Lloyd, J. R., Shepela, A., Riel, N., Proc. 49th Ann. Meet. Electron Microscopy Soc. of America, 820 (1991).Google Scholar
18 Tezaki, A., Mineta, T., Egawa, H., Noguchi, T., Proc. 28th IEEE Int. Rel. Phys. Symp., 221 (1990).Google Scholar
19 Korhonen, M. A., LaFontaine, W. R., BØrgesen, P., Che-Yu, Li, J. Appl. Phys., 70 (11), 6774 (1991).Google Scholar
20 Besser, P. R., Marieb, T. N., Bravman, J. C., Flinn, P. A., Mat. Res. Symp. Proc., 338, 275 (1994).Google Scholar
21 Yeo, I.-S., Anderson, S. G. H., Liao, C.-N., Jawarani, D., Kawasaki, H., Ho, P. S., Mat. Res. Symp. Proc., 338, 281 (1994).Google Scholar
22 Genut, M., Li, Z., Bauer, C. L., Mahajan, S., Tang, P. F., Milnes, A. G., Appl. Phys. Lett., 58 (21), 2354 (1991).Google Scholar