Hostname: page-component-8448b6f56d-c47g7 Total loading time: 0 Render date: 2024-04-19T21:35:37.362Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of the Laser Repetition Rate on Crystalline Structure, Composition and Magnetic Properties of Laser Deposited Y3Fe5O12/Gd3Ga5O12(111) Films

Published online by Cambridge University Press:  01 February 2011

S. Kahl ,
V.P. Denysenkov ,
S.I. Kranzusch  and
A.M. Grishin
S. Kahl
Affiliation:
Condensed Matter Physics, Royal Institute of Technology, S-16440 Stockholm, Sweden;
V.P. Denysenkov
Affiliation:
Condensed Matter Physics, Royal Institute of Technology, S-16440 Stockholm, Sweden;
S.I. Kranzusch
Affiliation:
Laserlabour Göttingen e.V., D-37707 Göttingen Germany
A.M. Grishin
Affiliation:
Condensed Matter Physics, Royal Institute of Technology, S-16440 Stockholm, Sweden;
Get access

Abstract

Y3Fe5O12 (YIG) films have been deposited onto single crystal Gd4Ga5O12(GGG) substrates by publsed laser deposition. For a given set of experimental parameters, the oxygen background pressure and substrate tempetature were optimized to achieve the narrowest ferromagnetic resonance (FMR) lines. The repetition rate was then varied from 10 to 50 Hz. There is a cleasr transition from films with low saturation magnetization 4πMs ≈ 300 Gs, high coercive fields Hc > 20 Oe, and broad FMR lines ΔH > 100 Oe to films with 4πMs ≈ 1400Gs, Hc < 10 Oe, and ΔH ≤ 10 Oe. This crossover occurs when the laser repetition rate is changed from 20 to 30 Hz. No significant differences could be detected in any of the other investigated properties: crystalline structure, cation concentration rastio, amd surface roughness do not depend on the repetition rate. Annealing experiments show that the films deposited at 10 and 20 Hz repetition rate are oxygen deficent. We loaded the film deposited at 20 Hz with oxygen, so that it reached the bulk value for 4πMs. The coercive field, however, remained large.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 720: Symposium H – Materials Issues for Tunable RF and Microwave Devices III , 2002 , H6.7
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Eschenfelder, A.H., Magnetic Bubble Technology. (Springer-Verlag, 1980).Google Scholar
2. Rodrigue, G., Proc. IEEE, 76, 121 (1988).Google Scholar
3. Hansen, P., Witter, K., and Tolksdorf, W., J. Appl. Phys. 55, 1052 (1984)Google Scholar
4. Dionne, G. F. and Allen, G. A., J. Appl. Phys. 73, 6127 (1993).Google Scholar
5. Wei, J., Hu, H., and He, H., Phys. Stat. Sol. (a) 168 501 (1998).Google Scholar
6. Fujita, J., Levy, M., Osgood, R. M. Jr, Wilkens, L., and Dötasch, H., Appl. Phys. Lett. 76 2158 (2000)Google Scholar
7. Ibrahim, N. B., Edwards, C., and Palmer, S. B., J. Magn. Magn. Mater. 220 183 (2000)Google Scholar
8. Dorsey, P. C., Bushnell, S. E., Seed, R. G. and Vittoria, C., J. Appl. Phys. 74 1242 (1993).Google Scholar
9. Mayer, M., http://ibaserver.physics.isu.edu/sigmabase/programs/simnra44.html.Google Scholar