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Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SIC by Mbe

Published online by Cambridge University Press:  15 February 2011

R. Lantier ,
A. Rizzi ,
D. Guggi ,
H. Lüth ,
B. Neubauer ,
D. Gerthsen ,
S. Frabboni ,
G. Colì  and
R. Cingolani
R. Lantier
Affiliation:
Institut für Schicht- und lonentechnik (ISI), Forschungszentrum Jülich, D-52425 Jülich, Germany
A. Rizzi
Affiliation:
Institut für Schicht- und lonentechnik (ISI), Forschungszentrum Jülich, D-52425 Jülich, Germany Istituto Nazionale di Fisica della Materia - Dipartimento di Fisica, Università di Modena, I-41100 Modena, Italy
D. Guggi
Affiliation:
Institut für Schicht- und lonentechnik (ISI), Forschungszentrum Jülich, D-52425 Jülich, Germany
H. Lüth
Affiliation:
Institut für Schicht- und lonentechnik (ISI), Forschungszentrum Jülich, D-52425 Jülich, Germany
B. Neubauer
Affiliation:
Laboratorium für Elektronenmikroskopie, Universität Karlsruhe, D- 76128 Karlsruhe, Germany
D. Gerthsen
Affiliation:
Laboratorium für Elektronenmikroskopie, Universität Karlsruhe, D- 76128 Karlsruhe, Germany
S. Frabboni
Affiliation:
Istituto Nazionale di Fisica della Materia - Dipartimento di Fisica, Università di Modena, I-41100 Modena, Italy
G. Colì
Affiliation:
Istituto Nazionale Fisica della Materia, Dipartimento Scienza dei Materiali, Università di Lecce, 1-73100 Lecce, Italy
R. Cingolani
Affiliation:
Istituto Nazionale Fisica della Materia, Dipartimento Scienza dei Materiali, Università di Lecce, 1-73100 Lecce, Italy
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Abstract

The Gan heteroepitaxy on 6H-SiC is affected by the bad morphology of the substrate surface. We performed a hydrogen etching at 1550°C on the 6H-SiC(0001) substrates to obtain atomically flat terraces. An improvement of the structural properties of GaN grown by MBE on such substrates after deposition of a LT-AIN buffer layer is observed. A value of less than 220 arcsec of the FWHM of the XRD rocking curve, showing a reduced screw dislocations density, is comparable with the best results reported until now for thick GaN samples. Photoluminescence showed a structured near band edge emission spectrum with evidence of the A, B and C free exciton recombinations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.50
Copyright
Copyright © Materials Research Society 1999

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