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Influence of The Alloy Composition on The Thermodynamic Parameters of Nucleation and Growth of SiGe

Published online by Cambridge University Press:  15 February 2011

J. Olivares ,
A. Rodríguez ,
J. Sangrador ,
T. Rodríguez ,
P. Martín ,
J. Jiménez ,
C. Ballesteros  and
M. Castro
J. Olivares
Affiliation:
Dpto. de Tecnología Electrónica, E.T.S.I. de Telecomunicación, Universidad Politécnica de Madrid, 28040 Madrid, Spain
A. Rodríguez
Affiliation:
Dpto. de Tecnología Electrónica, E.T.S.I. de Telecomunicación, Universidad Politécnica de Madrid, 28040 Madrid, Spain
J. Sangrador
Affiliation:
Dpto. de Tecnología Electrónica, E.T.S.I. de Telecomunicación, Universidad Politécnica de Madrid, 28040 Madrid, Spain
T. Rodríguez
Affiliation:
Dpto. de Tecnología Electrónica, E.T.S.I. de Telecomunicación, Universidad Politécnica de Madrid, 28040 Madrid, Spain
P. Martín
Affiliation:
Dpto. de Física de la Materia Condensada, E.T.S.I. Industriales, Universidad de Valladolid, 47011 Valladolid, Spain
J. Jiménez
Affiliation:
Dpto. de Física de la Materia Condensada, E.T.S.I. Industriales, Universidad de Valladolid, 47011 Valladolid, Spain
C. Ballesteros
Affiliation:
Dpto. de Física, E. P. S., Universidad Carlos III, 28911 Leganés (Madrid), Spain
M. Castro
Affiliation:
Dpto. de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, 28040 Madrid, Spain
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Abstract

The influence of the germanium fraction on the parameters of the solid phase crystallization of amorphous silicon-germanium has been studied. Layers of different compositions were deposited by LPCVD at 450 °C and crystallized at 525, 550, 575 and 600 °C. The crystalline fraction was determined as a function of the annealing time for each germanium fraction and temperature. The incubation and the characteristic crystallization times were obtained by fitting the crystalline fraction to Avrami's model. The values of the diffusion activation energy were obtained for different compositions. The dependence of the nucleation rate and the growth velocity on the germanium fraction and the temperature was studied. The three parameters decrease as the Ge fraction increases; though the stronger dependence corresponds to the nucleation rate. The dependences on the composition and the temperature were analyzed in the frame of a conventional nucleation and growth model and their relationship with the corresponding free energies was discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 580: Symposium E – Nucleation & Growth Processes in Materials , 1999 , 147
Copyright
Copyright © Materials Research Society 2000

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