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The Influence of Substrate Polarity on the Blue Emission from As-doped GaN Layers Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

S. V. Novikov ,
L. X. Zhao ,
C. T. Foxon ,
I. Harrison ,
R. P. Campion ,
C. R. Staddon ,
S. W. Kang ,
O. Kryliouk  and
T. Anderson
S. V. Novikov
Affiliation:
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK On leave from the Ioffe Physical-Technical Institute, St. Petersburg, Russia
L. X. Zhao
Affiliation:
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
C. T. Foxon
Affiliation:
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
I. Harrison
Affiliation:
School of Electrical and Electronic Engineering, University of Nottingham, Nottingham, NG72 RD, UK
R. P. Campion
Affiliation:
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
C. R. Staddon
Affiliation:
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
S. W. Kang
Affiliation:
Chemical Engineering Department, University of Florida, Gainesville, FL 32611, USA
O. Kryliouk
Affiliation:
Chemical Engineering Department, University of Florida, Gainesville, FL 32611, USA
T. Anderson
Affiliation:
Chemical Engineering Department, University of Florida, Gainesville, FL 32611, USA
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Abstract

The influence of sample orientation and polarity on the blue emission from As-doped GaN layers grown by plasma-assisted molecular beam epitaxy (PA-MBE) was investigated. Arsenic doped GaN layers were grown under identical PA-MBE conditions on several types of substrates including c-plane (0001) sapphire and polar and non-polar GaN templates grown by metal-organic vapour phase epitaxy (MOVPE). Non-polar GaN MOVPE templates were grown on aplane (11–20) sapphire and LiAlO2 (100). The orientation and polarity have a strong influence on the morphology and the optical properties of As-doped GaN layers. Strong blue emission from As-doped GaN was observed only in the case of (000–1) oriented N-polarity layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.66
Copyright
Copyright © Materials Research Society 2004

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References

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