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Influence of Quantum Confinement on the Photoemission From Nonlinear Optical Materials

Published online by Cambridge University Press:  10 February 2011

Amakhya P. Ghatak ,
P. K. Bose  and
Gautam Majumder
Amakhya P. Ghatak
Affiliation:
Department of Electronic Science, University of Calcutta, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Calcutta-700 009, INDIA.
P. K. Bose
Affiliation:
Department of Mechanical Engineering, Faculty of Engineering and Technology, Jadavpur University, Calcutta-700 032, INDIA.
Gautam Majumder
Affiliation:
Department of Mechanical Engineering, Faculty of Engineering and Technology, Jadavpur University, Calcutta-700 032, INDIA.
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Abstract

wells (QWs), quantum well wires (QWWs) and quantum dots (QDs) of nonlinear optical materials, respectively on the basis of a newly derived electron dispersion law considering all types of anisotropies within the framework of k.p. formalism. It is found, taking CdGeAs2, GaAs and InAs, as exmaples, that the photoemission increase with increasing photon energy in a ladder like manner and also exhibits oscillatory dependences with changing electron concentration with film thickness respectively for all types of quantum confinement. The photoemission current density is greatest in QDs and least in QWWs. In addition, the theoretical results are in agreement with the experimental observation as reported elsewhere.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 555
Copyright
Copyright © Materials Research Society 1998

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