Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-06-19T15:46:33.236Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Process Parameters on Resistive Switching in MOCVD NiO Films

Published online by Cambridge University Press:  27 July 2011

X.P. Wang ,
D.J. Wouters ,
M. Toeller ,
J. Meersschaut ,
L. Goux ,
Y.Y. Chen ,
B. Govoreanu ,
L. Pantisano ,
R. Degraeve  and
M. Jurczak
...Show all authors
X.P. Wang
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium
D.J. Wouters
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium Department of Electrical Engineering (ESAT), Katholieke Universiteit Leuven, B-3001 Leuven, Belgium
M. Toeller
Affiliation:
Tokyo Electron Limited, Akasaka Biz Tower, 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325 Japan
J. Meersschaut
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium
L. Goux
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium
Y.Y. Chen
Affiliation:
Department of Electrical Engineering (ESAT), Katholieke Universiteit Leuven, B-3001 Leuven, Belgium
B. Govoreanu
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium
L. Pantisano
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium
R. Degraeve
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium
M. Jurczak
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium
L. Altimime
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium
J. Kittl
Affiliation:
IMEC, Kapeldreef 74, B-3001 Leuven, Belgium
Get access

Abstract

The unipolar resisitive switching properties of MOCVD deposited NiO in Ni/NiO/TiN stacks is reported. The switching quality is defined as function of RESET current and Roff/Ron ratio, and the importance of the Forming current and voltage on these parameters is discussed. The effect of structural stack variations as NiO thickness, Ti doping, and TiN thickness on the switching behavior of NiO is explained by the effect on the forming current and voltage conditions, and on Joule heating dissipation. Thinner NiO films, Ti doping, as well as thicker top electrode improve the switching quality by decreasing the RESET current and increasing the Roff/Ron ratio.

Keywords

memorymicroelectronicselectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1337: Symposium Q – New Functional Materials and Emerging Device Architectures for Nonvolatile Memories , 2011 , mrss11-1337-q07-09
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Baek, I. G., Lee, M. S., Seo, S., Lee, M. J., Seo, D. H., Suh, D.-S., Park, J. C., Park, S. O., Kim, H. S., Yoo, I. K., Chung, U-In, Moon, J. T., IEDM Tech. Dig. 587 (2004)Google Scholar
2. Meersschaut, J., Toeller, M., Schaekers, M., Wang, X., Brijs, B., Wouters, D., Jurczak, M., Altimime, L., Van Elshocht, S., Vancoille, E., Physics and Technology of High-k Materials 8, ECS Transactions 33 (3), 313 (2010)Google Scholar
3. Kinoshita, K., Tsunoda, K., Sato, Y., Noshiro, H., Yagaki, S., Aoki, M., Sugiyama, Y., Appl. Phys. Lett. 93, 033506 (2008).Google Scholar
4. Nardi, F., Ielmini, D., Cagli, C., Spiga, S., Fanciulli, M., Goux, L., Wouters, D. J., Proc. IEEE International Memory Workshop, 66 (2010)Google Scholar
5. Goux, L., Lisoni, J. G., Wang, X. P., Jurczak, M., Wouters, D. J., IEEE Trans. Electron Devices 56, 2363 (2009)Google Scholar