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Influence of Polysilicon Processing on the Quality of Thin RTP/Furnace Gate Oxides

Published online by Cambridge University Press:  21 February 2011

J. Haase ,
R. Ferretti  and
S. Prasad
J. Haase
Affiliation:
Institut f/r Halbleitertechnologie und Werkstoffe der Elektrotechnik, Appelstr.11A, D-3000 Hannover 1, West-Germany.
R. Ferretti
Affiliation:
Institut f/r Halbleitertechnologie und Werkstoffe der Elektrotechnik, Appelstr.11A, D-3000 Hannover 1, West-Germany.
S. Prasad
Affiliation:
Institut f/r Halbleitertechnologie und Werkstoffe der Elektrotechnik, Appelstr.11A, D-3000 Hannover 1, West-Germany.
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Abstract

Thin layers of oxides (10–11nm) were fabricated by rapid thermal (RTP) or furnace oxidation. The RTP oxides were grown at different temperatures and were exposed to a two step post oxidation anneal (POA). The furnace oxides were grown at one temperature and received different POA/s. As gate metallization, in-situ phosphorus-doped polysilicon was used. Post poly anneal (PPA) is carried out in the RTP system using a set of temperatures. After having defined MOS structures by photolithography oxide charges, breakdown voltages and breakdown charges were determined. For different current densities, FN-voltage shift during constant current injection was monitored to make lifetime predictions. Received data were correlated to the different process parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 287
Copyright
Copyright © Materials Research Society 1990

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References

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