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The Influence of Point Defects on Two Dimensional Diffusion Kinetics

Published online by Cambridge University Press:  28 February 2011

P.B. Griffin  and
J.D. Plummer
P.B. Griffin
Affiliation:
Integrated Circuits Laboratory, Center for Integrated Systems,Stanford, CA 94305
J.D. Plummer
Affiliation:
Integrated Circuits Laboratory, Center for Integrated Systems,Stanford, CA 94305
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Abstract

The problems associated with two-dimensional diffusion of impurities coupled with point defects are outlined. The relative importance of the generation, diffusion and surface recombination rates are examined and the implications for 2-D modelling are discussed. Experimental results for the diffusion coefficient of interstitials indicate that the point defects can have orders of magnitude faster diffusivity than dopants. For accurate 2-Dprofiles, a large simulation space is needed to solve for the defects even though the impurity diffusion of interest occurs in the near surface region. The lateral extent of the diffusion profile is determined by the surface recombination rates of the defects. Results indicate that different technologically important interfaces, such as nitride and pad oxide have different recombination rates. The time dependence of the lateral decay isexperimentally investigated and indicates a steady state condition being reached. Parameters are extracted for the 2-D process simulator SUPREM-IV and the computer simulations are compared with experiment.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 75
Copyright
Copyright © Materials Research Society 1986

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References

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