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Influence of Oxygen on Rapid Thermal Co-Diffusion of Phosphorus and Aluminium in Silicon

Published online by Cambridge University Press:  15 February 2011

K. Mahfoud ,
B. Hartiti ,
J. C. Muller  and
P. Siffert
K. Mahfoud
Affiliation:
Lab. Phase (UPR du CNRS n°292), BP20, F-67037, Strasbourg, Cedex2, FRANCE
B. Hartiti
Affiliation:
Lab. Phase (UPR du CNRS n°292), BP20, F-67037, Strasbourg, Cedex2, FRANCE
J. C. Muller
Affiliation:
Lab. Phase (UPR du CNRS n°292), BP20, F-67037, Strasbourg, Cedex2, FRANCE
P. Siffert
Affiliation:
Lab. Phase (UPR du CNRS n°292), BP20, F-67037, Strasbourg, Cedex2, FRANCE
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Abstract

Local motion, diffusion and interaction of impurities in solids are important aspects of semiconductor material and device processing. Rapid thermal processing (RTP) is extremely concerned and appears to offer significant advantages in these areas. As oxygen is one of the dominant impurities present in silicon, various applications require different level of oxygen to improve the device performance.

In this work, we have taken the advantage of this feature to study the effects of the oxygen concentration in silicon on the rapid thermal co-diffusion of phosphorus and aluminium. In particular, we will show that the large enhancement of the minority carrier diffusion length (LD) due to this process can be related to the presence of oxygen and carbon which influences during the thermal cycle are of importance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 413
Copyright
Copyright © Materials Research Society 1995

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