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The Influence of Nitrogen Content on the Properties of Sputtered a-Si56Ge44:N:H Films

Published online by Cambridge University Press:  21 February 2011

T. Drusedau
T. Drusedau*
Affiliation:
FB Physik der Universitat Kaiserslautern, Postfach 3049, W—6750 Kaiserslautern, (on leave from: Inst. Exp. Physik der TU “Otto von Guericke”, PSF 124, O—3010 Magdeburg), Fed. Rep. of Germany
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Abstract

Nitrogen related absorption bands of the IR spectra are used to determine the content of nitrogen and N—H bonds in a—Si56 Ge44 films. A preferential attachment of nitrogen to silicon is observed. Nitrogen incorporation enhances the normalized photoconductivity to 5 · 107 cm2/V at maximum. This is related to N—H complexes acting as donors. A correlation between optical gap and single oscillator energy is reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 799
Copyright
Copyright © Materials Research Society 1991

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References

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