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The Influence of Implantation-Induced Non-Stoichionetry on the Epitaxial Recrystallization of CoSi2

Published online by Cambridge University Press:  03 September 2012

M.C. Ridgway ,
A. Vantomme ,
A.-M. Van Bavel  and
G. Langouche
M.C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, Australia
A. Vantomme
Affiliation:
Instituut voor Kern-en Stralingsfysika, Katholieke Universiteit Leuven, Leuven, Belqium
A.-M. Van Bavel
Affiliation:
Instituut voor Kern-en Stralingsfysika, Katholieke Universiteit Leuven, Leuven, Belqium
G. Langouche
Affiliation:
Instituut voor Kern-en Stralingsfysika, Katholieke Universiteit Leuven, Leuven, Belqium
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Abstract

Epitaxial CoSi2 layers on Si substrates have been amorphized with Co and/or Si ion implantation. The influence of nonstoichiometry on the rate of solid-phase epitaxial growth (SPEG) of amorphized CoSi2 has been investigated with time-resolved reflectivity, Rutherford backscattering spectrometry and Mossbauer spectrometry, the latter with radioactive 57Co probes. A decrease in SPEG rate was apparent with an increase in nonstoichiometry. For a given ion dose, the decrease was greater following Co implantation. The means by which non-stoichiometry is accommodated in a crystalline CoSi2 lattice - either through phase separation or defect formation - has been considered. SPEG rate retardation was also evident in samples implanted with both Si and Co ions with a Si:Co dose ratio of 2:1. Additional mechanisms may thus also contribute to the observed SPEG rate reduction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 203
Copyright
Copyright © Materials Research Society 1994

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References

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