Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-26T11:14:59.180Z Has data issue: false hasContentIssue false

Influence of Hydrogen Plasma Treatment Upon Native Oxides Plasma Grown on INP

Published online by Cambridge University Press:  22 February 2011

E. D. Belyakova
Affiliation:
Ioffe Physical Technical Institute, Polytechnicheskaya 26, St-Petersburg, 194021 Russia
S. V. Belyakov
Affiliation:
Ioffe Physical Technical Institute, Polytechnicheskaya 26, St-Petersburg, 194021 Russia
L. S. Berman
Affiliation:
Ioffe Physical Technical Institute, Polytechnicheskaya 26, St-Petersburg, 194021 Russia
A. T. Gorelenok
Affiliation:
Ioffe Physical Technical Institute, Polytechnicheskaya 26, St-Petersburg, 194021 Russia
I. N. Karimov
Affiliation:
Ioffe Physical Technical Institute, Polytechnicheskaya 26, St-Petersburg, 194021 Russia
R. V. Karzhavin
Affiliation:
Ioffe Physical Technical Institute, Polytechnicheskaya 26, St-Petersburg, 194021 Russia
I. A. Mokina
Affiliation:
Ioffe Physical Technical Institute, Polytechnicheskaya 26, St-Petersburg, 194021 Russia
N. M. Shmidt
Affiliation:
Ioffe Physical Technical Institute, Polytechnicheskaya 26, St-Petersburg, 194021 Russia
Get access

Extract

Investigations of plasma grown native oxides on indium phosphide carried out recently [1,2] have shown that these oxides exhibit properties which are promising to be used in MIS structures on InP, due to their stable composition which includes [InxPyOz]n polyphosphate phase mainly and due to reduced density of interface states (Nss<1011 eV−1 cm−2). It has been shown also that MIS structures with plasma native oxides exhibit C-V characteristics shifted towards positive values of voltage bias. The flat band shift is assigned to a negative charge injected into oxide film during plasma oxidation. The presence of this negative charge in plasma grown native oxides on InP may cause instability of electric properties of MIS structures [2].

The aim of this work was to make an attempt to influence upon negative effective oxide charge density by means of hydrogen plasma treatment.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Noh, S.K., Crisman, E.E., Stiles, P.J., J. of Materials Sci. Lett., 8, 10 (1989)Google Scholar
2. Belyakova, E.D., Belyakov, S.D., Berman, L.S., Gorelenok, A.T., Karimov, I.N., Karzhavin, R.V., Mikonshkin, V.M., Mokina, I.A., Sysoev, S.E., Shmid, N.M., presented at the 1992 MRS Fall Meeting, Boston, USAGoogle Scholar
3. Sugino, T., Ninomiya, H., Yamada, T., Shirafuji, J., Appl. Phys. Lett., 60, 1226 (1992)Google Scholar
4. Tardy, J., Thomas, I., Viktorovich, P., Gendry, M., Perrossier, J.L., Santinelli, C., Besland, M.P., Louis, P., Appl. Surface Sci., 50, 383 (1991)Google Scholar
5. Belyakova, E.D., Gabarova, A.D., Gorelenok, A.T., Karzhavin, R.V., Kopiev, J.G., Mizerov, M.N., Mikoushkin, V.M., Shmidt, N.M., presented at VII International Conference 1990, Minsk, Russia, p. 289 Google Scholar