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Influence of High-Fluence Proton Irradiation on the Optical Absorption and Microstructure of Rutile

Published online by Cambridge University Press:  01 February 2011

Tiecheng Lu ,
Sha Zhu  and
Lumin Wang
Tiecheng Lu
Affiliation:
Department of Physics, Sichuan University, Chengdu 610064, P.R. China Key Laboratory of Radiation Physics and Technology(Sichuan University), Ministry of Education, P.R. China International Center for Material Physics, Chinese Academy of Sciences, Shenyang 110015, P. R. China
Sha Zhu
Affiliation:
Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109, USA
Lumin Wang
Affiliation:
Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109, USA
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Abstract

Rutile (TiO2) single crystals of (110) or (001) orientation were irradiated by high fluence protons with the energy of 0.5, 4.9 and 18 MeV and with the fluence of 1×1018 and 1.9×1022 m-2. UV-VIS-IR, LRS and HRTEM were used to analyze the optical absorption and microstructure of samples. The UV-VIS-IR results showed that proton irradiation induces two absorption peaks centered at 760 and 1700 nm respectively, even high fluence irradiation induces absorption plateau at 600∼2500 nm. LRS results showed that the related intensity of common vibration modes is different for different planes. Proton irradiation induces the vibration frequency and related intensity change for inherent LRS modes, and several new vibration modes also appear. High fluence proton irradiation induced large defect clusters, i.e. stacking faults, which is demonstrated by HRTEM observation. The optical absorption mechanism also has been discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R3.22
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] Fujishima, A., Honda, K.. Nature 32, 37(1972)Google Scholar
[2] Ghosh, A. K., Maruska, H. P.. J. Electrochem. Soc. 124, 1516(1977)Google Scholar
[3] Blondeau, G., Froelicher, M., Froment, M., Hugot-Le-Goff, A., and Zerbino, J.. J. Electrochem. Soc. 126, 1529(1979)Google Scholar
[4] Matsumoto, Y., Kurimoto, J., Amagasaki, Y., and Sato, E.. J. Electrochem Soc. 127, 2148 (1980)Google Scholar
[5] O'Regan, B., Gratzel, M.. Nature 353, 737(1991)Google Scholar
[6] Taira, S., Miki, T., and Yanagi, H.. Applied Surface Science 143, 23 (1999)Google Scholar
[7] Göpel, W., Anderson, J.A., Frankel, D., Jaehnig, M., Philips, K., Schäfer, J.A. and Rocker, G.. Surf. Sci. 139, 333(1984)Google Scholar
[8] Idriss, H. and Barteau, M.A., Catal. Lett. 26, 123 (1994)Google Scholar
[9] Sullivan, J.L., Saied, S.O. and Bertoti, I. Vacuum, 42(1991)1203 Google Scholar
[10] Khubeis, I., Fromknecht, R., Massing, S. and Meyer, O.. Nucl. Instr. And Meth. In Phys. Res. B141,. 332(1998)Google Scholar
[11] Li, F., Ishimaru, M., Lu, P., Afanasyev-Charkin, I. V. and Sickafus, K. E.. Nucl. Instr. And Meth. In Phys. Res. B166/167, 314(2000)Google Scholar
[12] Uustare, T., Aarik, J. and Elanao, M.. Appl. Phys. Lett. 65, 2551(1996)Google Scholar
[13] Lu, Tie-Cheng, Lin, Li-Bin, Wu, Shao-Yi, Chen, Jun, Zhang, Yi-Yun, Nucl. Instr. And Meth. In Phys. Res. B191, 236–240(2002)Google Scholar
[14] Lu, Tie-Cheng, Lin, Li-Bin, Wu, Shao-Yi, Xu, Xue-Chun, Cheng, Gang. Surface and coatings technology 158–159, 431–435(2002)Google Scholar
[15] Chen, J., Lin, L.B. and Lu, T. C.. Chinese J. Comput. Phys., 17, 319 (2000)Google Scholar
[16] Chen, J., Lin, L.B. and Jing, F.Q.. J. Phys. Chem. Solids 62, 1257(2001)Google Scholar