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Influence of H2 on Ge Surface Segregation in Si/SiGe Heterostructures Grown by RTP/VLP-CVD

Published online by Cambridge University Press:  22 February 2011

Zhang Rong ,
Huang Hongbin ,
Gu Shulin ,
Yang Kai ,
Shi Yi ,
Wang Ronghua ,
Zheng Youdou  and
Feng Duan
Zhang Rong
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Huang Hongbin
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Gu Shulin
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Yang Kai
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Shi Yi
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Wang Ronghua
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Zheng Youdou
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Feng Duan
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
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Abstract

In this paper we report the influence of H2 on Ge surface segregation in Si/SiGe heterostructures. The sample were grown on Si(001) substrate tinder different gas flow of H2 by RTP/VLP-CVD. Auger electron energy spectroscopy(AES) has been used to determine the Ge distribution in Si/SiGe heterostructures. The results indicate that H2 can strongly alter the mechanism of Ge surface segregation and change the distribution of Ge atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 63
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1] fox example, Youdou, ZHENG, Rong, ZHANG, Liqun, HU Shulin, GU, Ronghua, WANG, Ping, HAN and Ruolian, JIANG, in Mechanisms of Heteroepitaxial Growth, edited by Chisholm, M.F., Hull, R., Schowalter, L.J. and Garrison, B.J., pp227–232.Google Scholar
[2] Fukatsu, S., Usami, N., Fujita, K., Yaguchi, H., Shiraki, Y. and Ito, R, J. Cryst. Growth, 127,401(1993).CrossRefGoogle Scholar
[3] Fujita, K., Fukatsu, S., Yaguchi, H., Shiraki, Y. and Ito, R., Appl. Phys. Lett., 59, 2240(1991)CrossRefGoogle Scholar
[4] Fukatsu, S., Fujita, K. Yaguchi, J., Shiraki, Y. and , Ito, Appl. Phys. Lett., 59, 2103(1991)CrossRefGoogle Scholar
[5] Karimi, M., Kaplan, T., Mostoller, M. and Jesson, D.E., Phys. Rev. B, 47, 9931(1993)CrossRefGoogle Scholar
[6] GU, Shulin, ZHANG, Rong, HAN, Ping, WANG, Ronghua, HU, Liqun and ZHENG, Youdou, in Proceedings of 21st International Conference on the Physics of Semiconductors, August 10-14, 1992, Beijing, CHINA, Edited by JIANG, Ping and ZHENG, Houzhi, World Scientific, Singapore, p598 Google Scholar
[7] Rong, ZHANG, Youdou, ZHENG, Ruolian, JIANG, Liqun, HU, Peixin, ZHONG, Shidong, YU, Qi, LI, Duan, FENG and Guangxi, CHEN, Appl. Surf. Sci, 48/49, 356(1991)CrossRefGoogle Scholar
[8] GU, Shulin, ZHENG, Youdou, ZHANG, Rong, WANG, Ronghua and ZHONG, Peixin, J. Appl. Phys., 1994 Google Scholar
[9] Harris, J. J., Ashenford, D. E., Foxon, C.T., Dobson, P. J. and Joyce, B.A.. Appl. Phys. A, 33, 87(1984)CrossRefGoogle Scholar
[10] Malik, R., Gulari, E., Li, S. H. and Bhattacharya, P. K., J. Apply. Phys., 73, 5193(1993)CrossRefGoogle Scholar