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Influence of Growth Parameters on the Properties of InxGa1-xAs Grown on GaAs by OMVPE

Published online by Cambridge University Press:  22 February 2011

E. Ernest Van Dyk ,
Andrew W. R. Leitch  and
Hendrik L. Ehlers
E. Ernest Van Dyk
Affiliation:
Physics Department, University of Port Elizabeth, P O Box 1600, Port Elizabeth, 6000, SOUTH AFRICA
Andrew W. R. Leitch
Affiliation:
Physics Department, University of Port Elizabeth, P O Box 1600, Port Elizabeth, 6000, SOUTH AFRICA
Hendrik L. Ehlers
Affiliation:
Physics Department, University of Port Elizabeth, P O Box 1600, Port Elizabeth, 6000, SOUTH AFRICA
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Abstract

InxGa1-xAs epilayers (x < 0.2) have been grown on GaAs substrates by atmospheric pressure OMVPE. The effects of varying the substrate temperature and the gas composition on the properties of the epilayers were investigated. The investigations have shown that higher mobilities were obtained at low growth temperatures (610°C), while optimum optical properties were obtained at higher growth temperatures (690°C). Variation of the AsH3 overpressure yielded optimum electrical and optical properties at a V/III ratio of 50. 77 K mobilities higher than 42 000 cm2/V.s and photoluminescence linewidths as low as 4.4 meV were obtained for x = 0.087 and x = 0.137 epilayers, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 355
Copyright
Copyright © Materials Research Society 1994

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References

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