Hostname: page-component-848d4c4894-pjpqr Total loading time: 0 Render date: 2024-07-04T17:18:04.535Z Has data issue: false hasContentIssue false

Influence of Growth Orientation and Uniaxial Stress on the Electronic Properties of GaAs / GaAlAs Quantum Wells

Published online by Cambridge University Press:  25 February 2011

N. Saidi
Affiliation:
Microoptoelectronic Laboratory, Institut of Physics, Universty of Es-Snia, ORAN ALGERIA
K. Zitouni
Affiliation:
Microoptoelectronic Laboratory, Institut of Physics, Universty of Es-Snia, ORAN ALGERIA
A. Kadri
Affiliation:
Microoptoelectronic Laboratory, Institut of Physics, Universty of Es-Snia, ORAN ALGERIA
Get access

Abstract

Using the envelope function formalism and the effective mass thecry, we have studied the E(k) energy dispersion and the confinement energies of the lower lying conduction band and the higher lying valence bands states in GaAs /GaAlAs Single Qantum Well (SQW) structures grown on GaAs substrates with different orientations of the growth axis :(001),(111),and (113). Then, the valence subbands dispersions are calculated away from the zone center for a given well width and under uniaxial stress for the three different growth directions

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Subbana, Seshadri, Kroemer, Herbert, and Merz, James L. J. Appl. Phys 59 (2), 15 September (1986)Google Scholar
[2] Fukunaga, T., Takamori, T. and Nakashima, H., J. Cryst. Growth 81, 85, 1987 Google Scholar
[3] Wang, W.I., Mendez, E.E., and lye, Y., J. Appl. Phys 60 (5), 1 (1986)Google Scholar
[4] Hayakawa, T., Kondo, M., Suyama, T., Takahashi, K., Yamamoto, S., Hijikata, T., Japan. Journal of Applied Physics 26, L302 (1987), Appl. Phys. Lett. 52, 339 (1988), Jour.of Appl. Phys. 64, 297 (1988)Google Scholar
[5] Luttinger, J.M. and Kohn, W., Physical Eeview 97, 869 (1957)Google Scholar
[6] Bir, G.L. and Pikus, G.L., in Symmetry and Strain Effects in Semiconductors, Willey, New-York (1974)Google Scholar