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Influence of Free Charge on the Lattice Parameters of GaN and Other Semiconductors

Published online by Cambridge University Press:  10 February 2011

M. Leszczyński ,
J. Bąk-Misiuk ,
J. Domagała  and
T. Suski
M. Leszczyński
Affiliation:
High Pressure Research Center, PAS, Sokolowska 29/37, 01–142 Warsaw, Poland, mike@iris.unipress.waw.pl
J. Bąk-Misiuk
Affiliation:
Institute of Physics, PAS, Al. Lotników 32/46, 02–668 Warsaw, Poland, bakmi@ifpan.edu.pl
J. Domagała
Affiliation:
Institute of Physics, PAS, Al. Lotników 32/46, 02–668 Warsaw, Poland, bakmi@ifpan.edu.pl
T. Suski
Affiliation:
High Pressure Research Center, PAS, Sokolowska 29/37, 01–142 Warsaw, Poland, mike@iris.unipress.waw.pl
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Abstract

Lattice parameters of semiconductors depend on the concentration of free electrons via the deformation potentials of the occupied minima of the conduction bands. In the presented work we examined the lattice parameters of variously doped GaN samples (epitaxial layers on sapphire and on SiC, bulk crystals grown at high hydrostatic pressure and homoepitaxial layers). The following dopants were used: Si, Mg and O. The measurements were performed using high resolution X-ray diffractometry. The results indicate that free electrons expand the lattice what confirms a negative value of the deformation potential of the Γ minimum of the conduction band. However, for Mg-doping (acceptor) we observed the lattice expansion as well. This violates the Vegard's law, as Mg ions are smaller than Ga ions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 311
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1 Leszczyński, M., Franzosi, P, J. Cryst. Growth, 134, 151 (1993).Google Scholar
2. Leszczyński, M., unpublished.Google Scholar
3 Figielski, T., Phys. Stat. Sol. 1, 306 (1961).Google Scholar
4 Keyes, W., Solid State Phys. 20, 37 (1967).Google Scholar
5. Bak-Misiuk, J., Leszczyński, M., Domagała, J. and Zytkiewicz, Z.R., J. Appl Phys. 78, 6994 (1995).Google Scholar
6. Cargill , III, Angillelo, J. and Kavanagh, K.J., Phys. Rev. Lett. 61, 1748 (1988).Google Scholar
7. Cargill, G.S. III, Segmüller, A., Kuech, T. F. and Theis, T.N., Phys. Rev. B46, 10078 (1992).Google Scholar
8. Pietsch, U., Bak-Misiuk, J. and Gottschalch, V., Phys. Stat. Sol. (a) 82, K137 (1984).Google Scholar
9. Bąk-Misiuk, J., Brühl, H.G., Paszkowicz, W. and Pietsch, U., Phys. Stat. Sol. (a) 106, 451 (1988).Google Scholar
10. Leszczyński, M., Bąk-Misiuk, J, Domagała, J., Muszalski, J., Kaniewska, M. and Marczewski, J, Appl. Phys. Lett. 67, 539 (1995)Google Scholar
11. Contreras, G., Tapfer, L., Sood, A. K. and Cardona, M., Phys. Stat. Sol. (b) 131, 475 (1985).Google Scholar
12. Bąk-Misiuk, J., Leszczyński, M., Paszkowicz, W. and Domagała, J., J. Appl. Phys. 69, 3366 (1996).Google Scholar
13. Chandi, D.J. and Chang, K.J., Phys. Rev. Lett. 61, 873 (1988)Google Scholar
14. Cardona, M. and Christensen, N.E., Phys. Rev. B35, 6182 (1987).Google Scholar
15. Van de Walle, C.G., Phys. Rev. B39, 1871 (1989).Google Scholar
16. Nolte, D.D., Walukiewicz, W. and Haller, E. E., Phys. Rev. Lett. 59, 501 (1987).Google Scholar
17. Samuelson, L. and Nielsson, S., J. Lumin. 40&41, 127 (1988).Google Scholar
18. Pfeffer, P., Gorczyca, I. and Zawadzki, W., Solid State Commun. 51, 178 (1984).Google Scholar
19. Walukiewicz, W., Ruda, H.E., Lagowski, J. and Gatos, H.C., Phys. Rev. B32, 2645 (1985).Google Scholar
20. Price, G.L., Phys. Rev. Lett. 66, 469 (1991).Google Scholar
21. Yang, B.H., Wang, Z.G., Heand, H.J. and Liu, L.Y., J. Cryst. Growth 103, 371 (1990).Google Scholar
22. Lucas, N., Zabel, H., Morkoc, H. and Uniu, H. Appl. Phys. Lett. 52, 2117 (1988).Google Scholar
23. Porowski, S., Gregory, I. and Jun, J. in High Pressure Chemical Synthesis, eddited by Jurczak, J. and Baranowski, B. (Elsevier, Amsterdam, 1989), p. 21 Google Scholar
24. Pakula, K., Wysmolek, A., Korona, K.P., Baranowski, J.M., Stepniewski, R., Gregory, I., Bockowski, M., Jun, J., Krukowski, S., Wroblewski, M. and Porowski, S., Proceedings of NATO Advanced Research Workshop, HEAD95 Smolenice, Slovakia (in press).Google Scholar
25. Teisseyre, H., Nowak, G., Leszczyński, M., Grzegory, I., Bockowski, M., Krukowski, S., Porowski, S., Mayer, M., Peltzman, A., Karp, M., Ebeling, K.J., Karczewski, G., Nitride Semiconductor Researh, MRS Internet Journal, http://nsr.mij.mrs.Org/l.1/13.Google Scholar
26. Bond, W.L., Acta Crystalogr, 13, 814 (1960).Google Scholar
27. Fewster, P.F. and Andrew, N. L.. J. Appl. Crystallogr. 28, 451 (1995).Google Scholar
28. Detchprohm, T., Hiramatsu, K., Itoh, K. and Akasaki, J., Japan, J. Appl. Phys. 31, L1454 (1992).Google Scholar
29. Leszczyński, M., Teisseyre, H, Suski, T., Grzegory, I., Bockowski, M., Jun, J., Baranowski, K.J.M., Foxon, C.T. and Cheng, T.S., Appl. Phys. Lett. 69, 73 (1996).Google Scholar
30. Leszczyński, M., Suski, T., Perlin, P., Teisseyre, H., Grzegory, I., Bockowski, M., Jun, J., Porowski, S. and Major, , J. Phys. D: Appl. Phys. 28, A149 (1995).Google Scholar
31. Kim, Chinkyo, Robinson, I.K., Myoung, Jeamin, Shim, Kyuhwam, Yoo, Myung-Cheol and Kim, Kyekyoon, Appl. Phys. Lett. 49, 2358 (1996).Google Scholar
32. Leszczyński, M., Barski, , Grzegory, I., Porowski, S. (unpublished).Google Scholar
33. Perlin, P., Gorczyca, I., Christtansen, N.E., Grzegory, I., Teisseyre, H. and Suski, T., Phys. Rev. B45, 13307(1992).Google Scholar