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The Influence of Deposition Pressure on the Incorporation of Target and Ambient Oxygen Into Laser Ablated Material

Published online by Cambridge University Press:  21 February 2011

M. Zhu Tidrow ,
S.S. Tidrow ,
W.W. Wilber  and
R.R. Pfeffer
M. Zhu Tidrow
Affiliation:
Geo-Centers, P.O. Box 428, Newton Upper Falls, MA 02164
S.S. Tidrow
Affiliation:
National Research Council Associate
W.W. Wilber
Affiliation:
U.S. Army Research Laboratory, Electronics and Power Sources Directorate, Attn: AMSRL-EP-EC-H Fort Monmouth, NJ 07703-5601
R.R. Pfeffer
Affiliation:
U.S. Army Research Laboratory, Electronics and Power Sources Directorate, Attn: AMSRL-EP-EC-H Fort Monmouth, NJ 07703-5601
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Abstract

Oxygen plays an essential role in the growth of a variety of oxides such as high-Tc superconductors, ferroelectrics, ferrites and dielectrics. The oxygen available for film growth during laser ablation can come from two sources: the target material and the ambient deposition atmosphere. The amount of oxygen incorporated from these two sources at room temperature has been investigated over a range of deposition pressures. Thiswas accomplished using 18O as a tracer during pulsed laser deposition of amorphous filmsfrom Cu and CuO targets. It was found that the total amount of oxygen incorporated by the amorphous films increases with chamber pressure up to approximately 35 mTorr. For pulsed laser deposition from the oxide target, the major fraction of the oxygen within the deposited material comes from the target. For the oxide target, the amount of oxygen incorporated from the ambient atmosphere is strongly pressure dependent with a maximum near 35 mTorr. These results are compared to earlier work with YBa2Cu3O7.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 367
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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