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In-crystal Carrier Transport in Organic Single Crystal Transistors

Published online by Cambridge University Press:  01 February 2011

Jun Takeya ,
M. Yamagishi ,
Y. Tominari ,
Y. Iwasaki  and
M. Uno
Jun Takeya
Affiliation:
takeya@chem.sci.osaka-u.ac.jp, Osaka University, Graduate School of Science, 1-1, Machikaneyama, Toyonaka, 560-0043, Japan
M. Yamagishi
Affiliation:
yamamasa@chem.sci.osaka-u.ac.jp, Osaka University, Toyonaka, 560-0043, Japan
Y. Tominari
Affiliation:
tominari@chem.sci.osaka-u.ac.jp, Osaka University, Toyonaka, 560-0043, Japan
Y. Iwasaki
Affiliation:
iwasaki@chem.sci.osaka-u.ac.jp, Osaka University, Toyonaka, 560-0043, Japan
M. Uno
Affiliation:
uno@tri.pref.osaka.jp, TRI-Osaka, Izumi, 594-1157, Japan
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Abstract

We report a series of our experiments using organic single crystals to reach the maximum performance intrinsic to the materials. A consequence of the experiments is that a prescription for realizing high-mobility devices is to induce carriers in inner crystals to avoid scattering at the surfaces. Intrinsic-semiconductor character of the high-purity organic crystals favors thermal diffusion of the carriers into the crystals in the presence of weak gate-electric fields. Furthermore, it is demonstrated that the high-mobility transport of the in-crystal carriers are highlighted in double-gate single-crystal transistors with the two gate electric field balanced with each other.

Keywords

organicelectrical propertiesHall effect
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1091: Symposium AA – Conjugated Organic Materials–Synthesis, Structure, Device and Applications , 2008 , 1091-AA10-03
Copyright
Copyright © Materials Research Society 2008

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References

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