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The Incorporation and Complex Formation of Ag Acceptors in CdTe

Published online by Cambridge University Press:  10 February 2011

H. Wolf ,
T. Filz ,
J. Hamann ,
V. Ostheimer ,
S. Lany ,
Th. Wichert ,
M. Deicher  and
A. Burchard
H. Wolf
Affiliation:
Technische Physik, Universität des Saarlandes, D-66041 Saarbrücken, Germany
T. Filz
Affiliation:
Technische Physik, Universität des Saarlandes, D-66041 Saarbrücken, Germany
J. Hamann
Affiliation:
Technische Physik, Universität des Saarlandes, D-66041 Saarbrücken, Germany
V. Ostheimer
Affiliation:
Technische Physik, Universität des Saarlandes, D-66041 Saarbrücken, Germany
S. Lany
Affiliation:
Technische Physik, Universität des Saarlandes, D-66041 Saarbrücken, Germany
Th. Wichert
Affiliation:
Technische Physik, Universität des Saarlandes, D-66041 Saarbrücken, Germany
M. Deicher
Affiliation:
Fakultät für Physik, Universität Konstanz, D-78434 Konstanz, Germany; ISOLDE Collaboration, PPE ISOLDE, CERN, CH-1211 Geneve, Switzerland
A. Burchard
Affiliation:
Fakultät für Physik, Universität Konstanz, D-78434 Konstanz, Germany; ISOLDE Collaboration, PPE ISOLDE, CERN, CH-1211 Geneve, Switzerland
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Abstract

Using the radioactive isotope 111Ag, the incorporation of Ag into CdTe is investigated by photoluminescence spectroscopy (PL) and the perturbed yy-angular correlation technique (PAC). PL is used to demonstrate the incorporation as a substitutional acceptor (AgCd) by monitoring the intensity of the donor-acceptor transition, corresponding to an acceptor level of EV + 108 meV, which decreases just with the half life of the radioactive decay of the 111Ag isotope. Since the isotope 111Ag also serves as a probe atom for PAC experiments, it is possible to confirm the incorporation of Ag atoms on lattice sites with cubic symmetry. Additionally, in CdTe a defect complex is detected, which is assigned to a AgCd-VTe pair. A second defect complex is observed in CdTe doped with In, which is assigned to an InCd-AgCd pair. By PAC experiments with the probe 111In that are performed in Ag doped CdTe, the formation of the InCd-AgCd pair is confirmed besides the well known formation of the InCd-VCd pair. The migration energy of the cation vacancy is estimated on the basis of an isothermal annealing sequence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 337
Copyright
Copyright © Materials Research Society 1998

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