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The In-Based Metal Ohmic Contacts to n-GaAs

Published online by Cambridge University Press:  25 February 2011

Sun-An Ding ,
Tiwen Fan ,
Zhenjia Xu  and
C. C. Hsu
Sun-An Ding
Affiliation:
National Laboratory for Surface Physics, Institute of Semiconductors, CAS, Beijing (100083), China
Tiwen Fan
Affiliation:
National Laboratory for Surface Physics, Institute of Semiconductors, CAS, Beijing (100083), China
Zhenjia Xu
Affiliation:
National Laboratory for Surface Physics, Institute of Semiconductors, CAS, Beijing (100083), China
C. C. Hsu
Affiliation:
National Laboratory for Surface Physics, Institute of Semiconductors, CAS, Beijing (100083), China
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Abstract

Electrical, structural and reaction characteristics of In-based ohmic contacts to n-GaAs was studied. Attempts were made to form a low band gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction and thus yielding a low resistance, high reliability contacts. The contacts were fabricated by e-beam sputtering Ni, NiIn and Ge targets on VPE grown n+-GaAs film (∼1μm, 2xl018 cm-3) in UHV as the structure of Ni(200Å)/NiIn ( 100Å)/Ge(40Å)/n+-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500-900 °C). The lowest specific contact resistivity (pc) of (1.5±0.5)xl0-6 Qcm2 measured by transmission line method (TLM) was obtained after annealing at 700 °C for 10s. Auger sputtering depth profile and transmission electron microscopy (TEM) were used to analysis the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, InxGa1-xAs phases with large fractional 'area grown epitaxilly on the GaAs were found to be essential for reduction of the contact resistance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 307
Copyright
Copyright © Materials Research Society 1994

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References

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