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InAsN Grown by Plasma-Assisted Gas Source MBE

Published online by Cambridge University Press:  21 March 2011

Ding-Kang Shih ,
Hao-Hsiung Lin ,
Tso-Yu Chu  and
T. R. Yang
Ding-Kang Shih
Affiliation:
National Taiwan University, Dept. of Electrical Engineering, Taipei, Taiwan, R.O.C.
Hao-Hsiung Lin
Affiliation:
National Taiwan University, Dept. of Electrical Engineering, Taipei, Taiwan, R.O.C.
Tso-Yu Chu
Affiliation:
National Taiwan University, Dept. of Electrical Engineering, Taipei, Taiwan, R.O.C.
T. R. Yang
Affiliation:
National Taiwan Normal University, Dept. of Physics, Taipei, Taiwan, R.O.C.
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Abstract

We report the structural, electrical and optical properties of bulk InAsN alloy with various nitrogen contents deposited on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy. It is found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed from infrared reflectivity and Hall measurement on these degenerate InAsN samples. The sizeable increase on electron effective mass is consistent with the theoretical predictions based on band-anticrossing model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H2.5.1
Copyright
Copyright © Materials Research Society 2002

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