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In Situ XPS Study of Interaction of Thin IVA, VA Metal Films with Native Oxide on Si Substrates

Published online by Cambridge University Press:  10 February 2011

N. M. Sushkova  and
A. G. Akimov
N. M. Sushkova
Affiliation:
Laboratory of Topochemical Transformations in Surface Layers, Inst. of Physical Chemistry, Leninskii pr. 31, Moscow 117915, Russia.
A. G. Akimov
Affiliation:
Laboratory of Topochemical Transformations in Surface Layers, Inst. of Physical Chemistry, Leninskii pr. 31, Moscow 117915, Russia.
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Abstract

Phase formation and change in morphology of Ti, V and Nb oxide films on (100)Si and (111)Si, with native oxide layer, have been studied by XPS in situ. The metal oxides were formed by the interaction at room temperature in UHV multistep deposited of Ti, V or Nb with native oxide. The formation of clean silicon regions during the growth of three-dimensional metal oxide islands is discussed. Differences observed in composition of Nb oxides on (100) Si and (111) Si are considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 223
Copyright
Copyright © Materials Research Society 1999

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