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In Situ Temperature Measurement During Oxide Chemical Mechanical Planarization

Published online by Cambridge University Press:  01 February 2011

Jesse Cornely ,
Chris Rogers ,
Vincent Manno  and
Ara Philipossian
Jesse Cornely
Affiliation:
Tufts University, Department of Mechanical Engineering Medford, MA 02155, U.S.A
Chris Rogers
Affiliation:
Tufts University, Department of Mechanical Engineering Medford, MA 02155, U.S.A
Vincent Manno
Affiliation:
Tufts University, Department of Mechanical Engineering Medford, MA 02155, U.S.A
Ara Philipossian
Affiliation:
University of Arizona, Department of Chemical Engineering Tucson, AZ 85721, U.S.A
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Abstract

This paper presents temperature and friction force data at the pad-slurry-wafer interface during real time CMP polishing with in situ pad conditioning. Experiments are performed on a 1:2 scale laboratory tabletop rotary polisher with variable pad speed and wafer down force control. Dual emission laser induced fluorescence (DELIF) techniques are used to optically measure the temperature directly beneath the wafer during polishing using a two camera imaging system. An infrared camera and a thermocouple are alternately used to measure bow wave temperatures. Optically transparent BK-7 glass wafers with either concave (wafer edges sloping toward the pad) or convex (wafer edges sloping away from the pad) curvature were used. When concave wafers are polished, the bow wave temperatures are 3°C to 5°C higher than the corresponding value for convex wafers. Similarly, slurry temperatures under the concave wafers are 5°C to 6°C higher than the value for convex wafers (±0.5°C). The friction force per unit area is typically 2 kPa to 3 kPa higher for concave wafers. Temperatures beneath the wafer are as high as 12°C above the ambient temperature for a concave wafer at a high applied wafer pressure (41.4 kPa) or linear velocity (0.93 m/sec). Bow wave temperatures reach as high as 9°C above ambient at a linear velocity of 0.93 m/sec. The lowest temperatures, within 1°C of ambient at the bow wave and 5°C above ambient under the wafer, were found with convex wafers at low applied wafer pressures (20.7 kPa). Linear velocity has little effect on the slurry temperature while polishing convex wafers. Increasing slurry abrasive concentration causes an increase in temperature, despite a decrease in friction force. A correlation, with an R-squared value greater than 0.96, exists between the bow wave temperature and the temperature beneath the wafer. This correlation holds at constant linear velocities across wafer shapes, applied wafer pressures, and slurry concentrations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F1.6
Copyright
Copyright © Materials Research Society 2003

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