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In Situ TEM Observations of Heavy Ion Damage in Gallium Arsenide

Published online by Cambridge University Press:  26 February 2011

M. W. Bench ,
I. M. Robertson  and
M. A. Kirk
M. W. Bench
Affiliation:
Dept. of Materials Science and Engineering, University of Illinois, Urbana, IL 61801
I. M. Robertson
Affiliation:
Dept. of Materials Science and Engineering, University of Illinois, Urbana, IL 61801
M. A. Kirk
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
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Abstract

Transmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments have been performed in situ by using the HVEN - Ion Accelerator Facility at Argonne National Laboratory. The ion bcorbardments (50 keV Ar+ and Kr+) and the microscopy have been carried out at temperatures rangrin from 30 to 300 K. Ion fluences ranged from 2 × 1011 to 5 × 1013 ions cm−2.

Direct-inpact amorphization is observed to occur in both n-type and semi-insulating GaAs irradiated to low ion doses at 30 K and room temperature. The probability of forming a visible defect is higher for low temperature irradiations than for room temperature irradiations. The amorphous zones formed at low temperature are stable to temperatures above 250 K. Post implantation annealing is seen to occur at room temperature for all samples irradiated to low doses until eventually all visible damage disappears.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 293
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Pearton, S.J., Poate, J.M., Sette, F., Gibson, J.M., Jacobson, D.C. and Williams, J.S., Nucl.Instr. Meth.,B19/20,369 (1987).Google Scholar
2. Sadana, D.K., Nucl.Instr.Meth.,B7\8,375 (1985).Google Scholar
3. Stein, H.J., Vook, F.L., Brice, D.K.,Borders, J.A. and Picraux, S.T., in Ion Implantation,edited by Eisen, F.H. and Chadderton, L.T. (Gordon and Breach Science Publishers, London, 1971),p.17.Google Scholar
4. Morehead, F.F. Jr. and Crowder, B.L., Rad.Effects, 6,27 (1970).Google Scholar
5. Webb, R.P. and Carter, G., Pad.Effects 59,69 (1981).Google Scholar
6. Weisenberger, W.H., Picraux, S.T. and Vook, F.L., Pad. Effects, 9,121 (1971).Google Scholar
7. Stevanovic, D.V., Tognetti, N.P.,Carter, G., Christodoulides, C.E., Ibrahim, A.M. and Thompson, D.A., Pad. Effects, 71,95 (1983).Google Scholar
8. Tognetti, N.P., Carter, G., Stevanovic, D.V. and Thcapson, D.A., Rad.Effects, 66 15 (1982)CrossRefGoogle Scholar
9. Chandler, T.J. and Jenkins, M.L. in Microscopy of Semiconductor Materials, 1983, Inst.Phys.Conf.Ser., 67,London p.297.Google Scholar
10. Jenkins, M.L., Chandler, T.J., Robertson, I.M. and Kirk, M.A.,in Microscopy of Semiconductor Materials, 1985, Inst.Phys.Conf.Ser., 76,London p.227.Google Scholar
11. Taylor, A., Wallace, J.R., Ryan, E.A., Philippides, A. and Wrobel, J.R., Nucl. Instr. Meth., 189,211 (1981).Google Scholar
12. Howe, L.M. and Rainville, M.H., Nucl.Instr.Meth.,182/183, 143 (1981).Google Scholar
13. Black, T.J., Jenkins, M.L., English, C.A. and Kirk, M.A.. Proc. Royal Soc., A409,177, (1987).Google Scholar
14. Thommen, K., Rad.Effects, 2,201 (1970).Google Scholar