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In Situ Stress Measurements of Co-Based Multilayer Films

Published online by Cambridge University Press:  15 February 2011

Young-Suk Kim  and
Sung-Chul Shin
Young-Suk Kim
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology, Yusung-Gu, Taejon 305-701, Korea
Sung-Chul Shin
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology, Yusung-Gu, Taejon 305-701, Korea
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Abstract

We have constructed an apparatus for in situ measurement of stress of the film prepared by sputtering using an optical non-contact displacement detector. A change of the gap distance between the detector and the substrate, caused by stress of a deposited film, was detected by a corresponding change of the reflectivity. The sensitivity of the displacement detector was 5.9 µV/Å and thus, it was turned out to be good enough to detect stress caused by deposition of a monoatomic layer. The apparatus was applied to in situ stress measurements of Co/X(X=Pd or Pt) multilayer thin films prepared on the glass substrates by dc magnetron sputtering. At the very beginning of the deposition, both Co and X sublayers have subjected to their own intrinsic stresses. However, when the film was thicker than about 100 Å, constant tensile stress in the Co sublayer and compressive stress in the X sublayer were observed, which is believed to be related to a lattice mismatch between the matching planes of Co and X.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 382: Symposium G – Structure and Properties of Multilayered Thin Films , 1995 , 285
Copyright
Copyright © Materials Research Society 1995

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References

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