Hostname: page-component-848d4c4894-v5vhk Total loading time: 0 Render date: 2024-06-23T08:56:00.643Z Has data issue: false hasContentIssue false
  • English
  • Français

In Situ Stress Measurements During the Formation of TiSi2 C49 On Si Wafers

Published online by Cambridge University Press:  16 February 2011

J. F. Jongste ,
G. C. A. M. Janssen  and
S. Radelaar
J. F. Jongste
Affiliation:
Centre for Submicron Technology / Delft Institute for Microelectronics and Submicron Technology, Delft University of Technology, P.O.Box 5046, 2600 GA Delft, the Netherlands.
G. C. A. M. Janssen
Affiliation:
Centre for Submicron Technology / Delft Institute for Microelectronics and Submicron Technology, Delft University of Technology, P.O.Box 5046, 2600 GA Delft, the Netherlands.
S. Radelaar
Affiliation:
Centre for Submicron Technology / Delft Institute for Microelectronics and Submicron Technology, Delft University of Technology, P.O.Box 5046, 2600 GA Delft, the Netherlands.
Get access

Extract

In the microelectronics industry titanium disilicide (TiSi2) is used as a material for metallization and interconnection on silicon based integrated circuits. In the C54 structure (face centred orthorhombic) TiSi2 has important properties for application in electronic devices: low resistivity (16 μΩ cm), stability up to 900°C and compatibility with silicon processing. In thin films this phase is formed above approx. 700°C. However before this phase is formed, a metastable TiSi2 phase with the C49 (or ZrSi2) structure [1] is already formed at lower temperature. This C49 phase is unfavourable as metallization in IC applications because of the high resistivity (60–300 μΩ cm). From a technological point of view however it is important to realize that during the C49 formation the thin film is subject to a large change of the intrinsic stress. The occurrence of this stress can cause problems during semiconductor device fabrication. Gate oxides in MOSFETs (and other IC microstructures) may be deteriorated by stress. Also focussing problems in lithographic steps can arise because of wafer warpage. In this paper we present in situ stress measurements of the formation of TiSi2 C49 from Ti-Si multilayers. From these measurements the kinetics of the formation process is analyzed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 188: Symposium K – Thin Films: Stresses and Mechanical Properties II , 1990 , 61
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Beyers, R. and Sinclair, R., J. Appl. Phys. 51 (12), 5240 (1985).Google Scholar
2. Christian, J.W., “The Theory of Transformations in Metals and Alloys”, part 1, Pergamon Press, 2nd edition, (1975).Google Scholar
3. Hoffmann, R.W., “Physics of Thin Films”, Academic Press (1966), p. 222.Google Scholar
4. Jongste, J.F. and Loopstra, O.B., to be published.Google Scholar
5. Teal, V.L. and Murarka, S.P., J. Appl. Phys. 61 (11), 5038 (1987).Google Scholar
6. Thompson, R.D., Takai, H., Psaras, P.A. and Tu, K.N., J.Appl. Phys. 61 (2), 540 (1987).Google Scholar
7. Raaijmakers, I. J. M. M., Ph.D. Thesis, University of Technology Eindhoven, The Netherlands, (1988).Google Scholar