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In Situ Measurement of Stress. Included During Annealing, in A1-2%Cu Thin Films

Published online by Cambridge University Press:  22 February 2011

P. H. Townsend  and
H. A. Vander Plas
P. H. Townsend
Affiliation:
Dept. of Materials Science, Stanford University, Stanford CA 94305
H. A. Vander Plas
Affiliation:
Xerox PARC, 3333 Coyote Hill Rd.Palo Alto CA 94304
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Abstract

Stress measurement in thin film systems is discussed and applied to Al-2%Cu filns on SiO2/Si substrates during thermal cycling. Plastic deformation obscrved during compressive stress relaxation is correlated with the formation of hillocks on the metal films. The effect of secondary layers of 10%Ti-90%W on the thermo-mcchanical response of Al films is examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 47: Symposium C – Thin Films: The Relationship of Structure to Properties , 1985 , 121
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. Paddock, A. and Black, J. R.; “Hillock Formatiom on Aluminummn Thin Filmns”: Paper 98, Proc. Electrochcmn. Soc., May 5–9, 1968.Google Scholar
2. Stoney, G.: Proc. Roy. Soc. (London) A82, 172 (1909).Google Scholar
3. Iloffman, R. W.; Physics of Thin Films 3, 211 (1966).Google Scholar
4. Pan, J.T. and Blech, I.; J. Appl. Phys. 55, 2874 (1984).CrossRefGoogle Scholar
5. Sinha, A. K. and Sheng, T. T.; Thin Solid Films 48, 117 (1978).Google Scholar
6. Santoro, C. J.; J. Flcctrochcm. Soc. 116, 361 (1969).Google Scholar