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In Situ Measurement of Pulsed Laser Indxuce Carrier Ceneraticn in Doped Silicon Films

Published online by Cambridge University Press:  21 February 2011

T. Saveshimn ,
M. Hara  and
S. Usui
T. Saveshimn
Affiliation:
Sony Research Center, Yokohama 240, Japan
M. Hara
Affiliation:
Sony Research Center, Yokohama 240, Japan
S. Usui
Affiliation:
Sony Research Center, Yokohama 240, Japan
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Abstract

Transient conductance measurements were used to study rapid carrier generation during the laser doping of a silicon film. The movement of the liquid-solid interface was measured and the point of initiation of carrier generation frcn dopant atoms diffused to the molten silicon was determined. It was established that the dopant atais are activated at the nmorent the dopant diffused region solidified. Also, the laser doping technique was used to fabricate polycrystalline silicsn thin film transistors (Poly-Si TFT's) ata processing temperature of 250ºC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 255
Copyright
Copyright © Materials Research Society 1990

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References

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