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In Situ Ellipsometric Study of the Dependence of a-Si:H Film Growth on Substrate Properties and Ignition Procedures

Published online by Cambridge University Press:  16 February 2011

U.I. Schmidt ,
W. Herbst ,
B. Schröder  and
H. Oechsner
U.I. Schmidt
Affiliation:
University of Kaiserlautern, Department of Physics and Center of Materials Research, P.O. Box 3049, D-67653 Kaiserslautern, Germany
W. Herbst
Affiliation:
University of Kaiserlautern, Department of Physics and Center of Materials Research, P.O. Box 3049, D-67653 Kaiserslautern, Germany
B. Schröder
Affiliation:
University of Kaiserlautern, Department of Physics and Center of Materials Research, P.O. Box 3049, D-67653 Kaiserslautern, Germany
H. Oechsner
Affiliation:
University of Kaiserlautern, Department of Physics and Center of Materials Research, P.O. Box 3049, D-67653 Kaiserslautern, Germany
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Abstract

In situ ellipsometry reveals that particle formation influences the growth of glow discharge a-Si:H. This particle formation is observed even under discharge conditions leading to the deposition of device quality Material. It is found that less dense material is deposited during the particle-induced initial transient stage of the discharge which influences the properties of the subsequently growing “bulk” film. The effect of special power gradient ignition procedures is discussed. A significant increase of solar cell efficency is achieved by choosing “soft” start conditions for the i-layer deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 85
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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