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In Segregation Effects on Optical and Doping Properties of InAlGaN Quaternary for UV Emitting Devices

Published online by Cambridge University Press:  17 March 2011

Hideki Hirayama ,
Atsuhiro Kinoshita ,
Takuya Yamanaka ,
Akira Hirata  and
Yoshinobu Aoyagi
Hideki Hirayama
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), 2-1, Hirosawa, Wako-shi, Saitama, 351-0198, Japan, hirayama@postman.riken.go.jp
Atsuhiro Kinoshita
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), 2-1, Hirosawa, Wako-shi, Saitama, 351-0198, Japan Department of Chemical Engineering, Waseda University, 3-4-1, Okubo, Shinjuku-ku, Tokyo, 169-8555, Japan
Takuya Yamanaka
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), 2-1, Hirosawa, Wako-shi, Saitama, 351-0198, Japan Department of Chemical Engineering, Waseda University, 3-4-1, Okubo, Shinjuku-ku, Tokyo, 169-8555, Japan
Akira Hirata
Affiliation:
Department of Chemical Engineering, Waseda University, 3-4-1, Okubo, Shinjuku-ku, Tokyo, 169-8555, Japan
Yoshinobu Aoyagi
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), 2-1, Hirosawa, Wako-shi, Saitama, 351-0198, Japan
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Abstract

We demonstrate room temperature intense ultraviolet (UV) emission wavelength ranging 300- 340 nm from InxAlyGa1-x-yN quaternary alloys grown by metal-organic vapor-phase-epitaxy (MOVPE). We found that the UV emission is drastically enhanced by introducing several percent of In into AlGaN. We fabricated single quantum well (SQW) consisting of InxAlyGa1-x-yN quaternary well and barrier, and clearly observed In segregation of sub-micron size from a cathode luminescence (CL) images. The intensity of 320nm-band emission from InAlGaN/InAlGaN QWs were as strong as those of 410nm-band emission from InGaN based QWs, at room temperature. The temperature dependence of photoluminescence (PL) emission for InAlGaN based QWs were much improved in comparison with GaN or AlGaN based QWs. We also grew Mg-doped InxAlyGa1-x-yN quaternary, and obtained hole concentration of 3×1017cm−3 by Hall measurement for high Al content (more than 50%) InxAlyGa1-x-yN quaternary.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G2.8
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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