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Impurity-Induced Layer Disordering in AlxGa1−xAs-GaAs Quantum well Heterostructures -

Published online by Cambridge University Press:  21 February 2011

D. G. Deppe ,
L. J. Guido  and
N. Holonyak Jr
D. G. Deppe
Affiliation:
Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
L. J. Guido
Affiliation:
Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
N. Holonyak Jr
Affiliation:
Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
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Abstract

Selective interdiffusion of Al and Ga at AlxGa1−x As-GaAs heterointerfaces can be carried out by conventional masking procedures and diffusion of acceptor impurities (e.g., Zn), or donor impurities (e.g., Si), or also by ion implantation. This process, impurity-induced layer disordering (IILD), makes it possible to convert quantum well heterostructures (QWHs) such as AlxGa1−xAs-GaAs superlattices (SLs) into bulk homogeneous AlyGa1−yAs where y is the average Al composition of the QWH or SL. Since th IILY process is maskable and thus selective, heterojunctions can be formed in directions perpendicular to the crystal growth direction, i.e., between as-grown “ordered” and IILD “disordered” regions. To date this process has been used most effectively in the fabrication of buriedheterostructure QW lasers, single and multiple stripe, where the disordered regions provide both optical and electrical confinement. The IILD process has also been used to advantage in the fabrication of high power laser diodes with non-absorbing “windows” at the laser facets and thus with better immunity from facet damage. In this paper we present data on the application of the IILD process to the fabrication of buried-heterostructure QW laser diodes. We also describe possible mechanisms by which the impurity-induced layer disordering proceeds based on Column III “Frenkel” defects and the influence of the crystal Fermi level on the defect solubility. These mechanisms are supported by experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 31
Copyright
Copyright © Materials Research Society 1988

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