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Impurity Removing at Dislocations in Float Zone Silicon by Aluminium-Silicon Alloying

Published online by Cambridge University Press:  15 February 2011

I. Perichaud  and
S. Martinuzzi
I. Perichaud
Affiliation:
Laboratoire de Photoélectricité - EA 882 D.S.O. “Défauts dans les Semi-conducteurs et leurs Oxydes” -, University of Marseille, - F 13397 Marseille Cedex 20 - France
S. Martinuzzi
Affiliation:
Laboratoire de Photoélectricité - EA 882 D.S.O. “Défauts dans les Semi-conducteurs et leurs Oxydes” -, University of Marseille, - F 13397 Marseille Cedex 20 - France
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Abstract

Aluminium-silicon alloying is applied to dislocation-containing FZ silicon samples in order to verify if this external gettering technique is able to remove impurities trapped by these defects. Samples were scratched (front surface), bent and annealed at 750°C for 6h in order to create dislocation arrays. Standard samples and also nickel contaminated samples were investigated by light beam induced current (LBIC) mapping technique before and after alloying at 900°C for 4h with a 1 μm thick aluminium layer deposited on the backside. The LBIC technique detects the features of the dislocation array in agreement with X ray topographs. In the standard samples, the contrast is relatedto an inadvertent contamination of the samples and disappears after gettering. In the contaminated samples, dislocation contrast is higher, the aluminium treatment attenuates strongly the dislocations electrical activity but not so neatly as for the standard samples. This result is explained by the possible microprecipitation of nickel at dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 493
Copyright
Copyright © Materials Research Society 1997

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References

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