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Impurity Gettering by Implanted Carbon in Silicon

Published online by Cambridge University Press:  21 February 2011

H. Wong ,
N. W. Cheung ,
K. M. Yu ,
P. K Chu  and
J. Liu
H. Wong
Affiliation:
Dept. of EECS, University of California, Berkeley, CA 94720
N. W. Cheung
Affiliation:
Dept. of EECS, University of California, Berkeley, CA 94720
K. M. Yu
Affiliation:
Lawrence Berkeley Laboratory and University of California, Berkeley, CA 94720
P. K Chu
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
J. Liu
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

We have observed strong gold gettering by implanted carbon in silicon. It was found that the gettering agents in carbon implanted layers are point defects associated with singular carbon atoms. The positions of the gettered Au atoms were found to be distorted substitutional sites. A pointdefect gettering model is proposed to explain our findings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 97
Copyright
Copyright © Materials Research Society 1989

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